FT612 Search Results

Contextual Info: FT61256 High Speed 32Kx8 Static CMOS Ram FEATURES High Speed Equal Access and Cycle Times – 12/15/20/25/35 ns (Commercial) – 15/20/25/35/45 ns (Industrial) – 20/25/35/45/55/70 ns (Military) Low Power Single 5V±10% Power Supply Easy Memory Expansion Using CE and OE Inputs

FT6122D

Abstract: ft6122 fast fet MHz
Contextual Info: January 1990 Edition 1.1 PRODUCT PROFILE FT6122, FT6122D Power MOS FET Arrays Silicon N-channel Enhancement Mode Power MOS FET Arrays ABSOLUTE M A X IM U M R A TIN G S Rating Ta = 25°C Symbol Condition Value U nit Drain Source Voltage V qss 120 V Gate Source Voltage

Contextual Info: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK

FT6120D

Abstract: FT6120
Contextual Info: January 1990 Edition 1.1 F u jf r s u PRODUCT PROFILE'. FT6120, FT6120D Power MOS FET Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T ABSOLUTE M AXIM UM RATINGS Rating Ta = 25°C S ym b o l C ondition U nit Value D rain Source Voltage V o ss

ft6121d

Abstract: FT6121 5MSD
Contextual Info: January 1990 Edition 1.1 FUJITSU FT6121, FT6121D Power MOS FE T Arrays Silicon N-channel Enhancem ent M ode Pow er M O S F E T A B S O L U T E M A X IM U M R A T IN G S Rating Ta = 25°C S ym b o l C ond ition Value U nit Drain Source Voltage V qss 120 V

Contextual Info: FT61256 L HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK

FT6122D

Abstract: FT811 FT6120 FT6122 FT6120D FT6112D FT6112
Contextual Info: Section 4 =ield Effect Transistor Arrays — A t a Glance Maximum Frequency Pag* D e vic e C m * ns V d s s (V ) Id (A) 4 -7 FT6110 FT8110D H M -65 120 120 ±2 ±2 4-11 FT6111 FT6111D R M -65 120 120 ±3 ±3 4-15 FT6112 FT6112D R M -6S 120 120 ±4.5 ±4.5

FT6122D

Abstract: ft6120d FT6122 FT6112D FT6120 FT6111 ft6121d 2sk 100a FT6121 VDD-100V
Contextual Info: - 142 - * f S s tt £ ffi & ffi S A £ tè , 1 % h' V E# * ft * (A) (V) ï r~ * * P d /P ch (W) Ig s s (max) (A) Vg s (V) 1 K (min) (max) Vd s (A) (A) (V) 14 (Ta=25*C) (min) (max) Vd s (V) (V) (V) (min) (S) W Id (A) Vd s (V) Id (A) Motor-D MOS N E 120 DSS

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

FT6122D

Abstract: FT6120D rIP 31 TRANSISTOR FT6121D FT6122 FT6120 6122D FT6110D fet transistor ft FT6112D
Contextual Info: P ow er Transistor P roducts F ie ld E ffe ct Transistor Arrays INTRODUCTION POWER MOS FE T A R R A Y SERIES D escription This series is S ilicon Enhancement-Mode Power MOS FE T Arrays. Each array consists o f 4 MOS FETs. The array is packaged in a small plastic 12-pin single in-line package w ith o r w ith o u t an isolated heatsink.