FS50R07N2E4 Search Results
FS50R07N2E4 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FS50R07N2E4B11BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO2-6 | Original | 658.21KB | |||
FS50R07N2E4BOSA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO2-6 | Original | 664.75KB |
FS50R07N2E4 Price and Stock
FLIP ELECTRONICS FS50R07N2E4BOSA1IGBT MODULE 650V 70A 190W |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FS50R07N2E4BOSA1 | Tray | 40 |
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Rochester Electronics LLC FS50R07N2E4B11BOSA1IGBT MODULE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FS50R07N2E4B11BOSA1 | Tray | 6 |
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Infineon Technologies AG FS50R07N2E4BOSA1LOW POWER ECONO - Trays (Alt: FS50R07N2E4BOSA1) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FS50R07N2E4BOSA1 | Tray | 40 |
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FS50R07N2E4BOSA1 | 858 | 25 |
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FS50R07N2E4BOSA1 | 858 | 1 |
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FS50R07N2E4BOSA1 | 280 |
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Infineon Technologies AG FS50R07N2E4B11BOSA1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FS50R07N2E4B11BOSA1 | 10 |
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FS50R07N2E4B11BOSA1 | 8 |
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FS50R07N2E4B11BOSA1 | 7 | 1 |
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FS50R07N2E4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FS50R07N2E4Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R07N2E4 |
Original |
FS50R07N2E4 FS50R07N2E4 | |
FS50R07N2E4Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R07N2E4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC |
Original |
FS50R07N2E4 | |
FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
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Original |
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FS50R07N2E4Contextual Info: IGC28T65T8M IGBT3 Chip Medium Power Features: • 650V Trench & Field Stop technology high short circuit capability, self limiting short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target |
Original |
IGC28T65T8M L7562M, FS50R07N2E4 | |
FS50R07N2E4Contextual Info: SIDC14D65C8 Fast switching diode chip in EMCON 3 -Technology Features: • 650V EMCON 3 technology 65 µm chip • Soft, fast switching • Low reverse recovery charge • Small temperature coefficient • Qualified according to JEDEC for target applications |
Original |
SIDC14D65C8 L4024C, FS50R07N2E4 | |
Contextual Info: IGC28T65T8M IGBT3 Chip Medium Power Features: • 650V Trench & Field Stop technology high short circuit capability, self limiting short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target |
Original |
IGC28T65T8M IEC62258-3: L7562M, |