IGC28T65T8M Search Results
IGC28T65T8M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
FS50R07N2E4Contextual Info: IGC28T65T8M IGBT3 Chip Medium Power Features: • 650V Trench & Field Stop technology high short circuit capability, self limiting short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target |
Original |
IGC28T65T8M L7562M, FS50R07N2E4 | |
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Contextual Info: IGC28T65T8M IGBT3 Chip Medium Power Features: • 650V Trench & Field Stop technology high short circuit capability, self limiting short circuit current positive temperature coefficient easy paralleling Qualified according to JEDEC for target |
Original |
IGC28T65T8M IEC62258-3: L7562M, |