FS10 Search Results

FS10R12YT3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS10R12YT3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # $%& ' / " / # < " * = < !" " 7 " ) *+,- $+ ' 0 ()

Contextual Info: FS10ASJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1408-0200 Previous: MEJ02G0061-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 0.19 Ω ID : 10 A Integrated Fast Recovery Diode (TYP.) : 95 ns

G296

Abstract: rfid 13.56 MHz J596 8.2 13.56 M-2096
Contextual Info: _P R E M O FS1008 Features Dimensions Leadless inductor wound on ferrite body. High SRF, allow excellent operation in RFID 13.56 MHz, filters in G SM frequencies, DECT, cordless communications, wireless LANs, etc. Operating temperature:

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-03 HIGH-SPEED SWITCHING USE FS10KM-03 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 10V DRIVE V d s s .3 0V rDS ON (MAX). 95m i2

B1470

Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q

78MI2

Abstract: FS10KM-06
Contextual Info: MITSUBISHI Neh POWER MOSFET F S 10K M -06 HIGH-SPEED SWITCHING USE FS10KM-06 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2 .8 1 0 .2 10V DRIVE V d s s .60V rDS ON (M 8 m i i

FS100R12KT3

Contextual Info: Technische Information / technical information FS100R12KT3 IGBT-Module IGBT-modules EconoPACK 3 Modul mit schnellem Trench/Feldstop IGBT3 und High Efficiency Diode EconoPACK™3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FS100R17KE3

Contextual Info: Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! " # $ % % ! " 3, 3 % : ! " ? ? % " $ @ -./0 12 - &. +,

FS10KM-10

Abstract: 710a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2

FS10KM-2

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KM-2 HIGH-SPEED SWITCHING USE FS10KM-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡10V DRIVE

3RG7857-1BD

Abstract: 3RG7855-1RG 3RG787-1BD 7855-2BD AlMgSi0,5 ir sensors Siemens Optical Sender ALU-2509 3rg7857 3RG7855-1R
Contextual Info: SIMATIC FS100 3RG7855-XXX MO NTAGEANLEITUNG MOUNTING INSTRUCTION Bestimmung Destination Diese Anleitung beschreibt die Montage und den Aus- These instruction describes mounting and the substitution tausch von Einzelkomponenten der SIMATIC FS100 of single components of the SIMATIC FS100 safety

FS10VS-5

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10VS-5 HIGH-SPEED SWITCHING USE FS10VS-5 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 250V

FS10UMA-5A

Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS10UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KT4G   IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData

fs5asj-3

Abstract: mosfet fs series
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 4V DRIVE (CONTINUED) Max. ratines POv'vER D E v l C E S Type No. VDSS m Pd m W Electrical characteristics (TYP.) V38$ TYP. MAX. Package Ctis ¥<a{W iv) outline W FS5ASJ-2 * FS5UMJ-2 ★ FS5VSJ-2 * FS5KMJ-2 * FS10ASJ-2

Contextual Info: P OWE R T RAN S FO R M E R P C M O U N T : SPLIT PACK FS10-1200 Description: The FS10-1200 is a dual primary and dual secondary, split bobbin design which operates with either a parallel input of 115V or a series input of 230V. The output voltage will be either 10.0V with a center-tap under a 1.2A load with the secondaries

Contextual Info: CLASS 2 TRANSFORMER FS10-110-C2 Description: The FS10-110-C2 is a series/parallel primary and dual secondary, split bobbin design which operates with either a parallel input of 115V or a series input of 230V. The secondaries are 5V @ 0.11A each. They can be used independently up to

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS100R12KS4 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  1200  V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS10R06VE3 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600  V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS10R06VE3_B2 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  600

FS100R17PE4

Abstract: EVG 12
Contextual Info: Technische Information / technical information FS100R17PE4 IGBT-Module IGBT-modules EconoPACK 4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK™4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /

FS10KM-12A

Abstract: fs10km 200v 5A mosfet power Diode 400V 20A mosfet 10a 600v
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-12A FS10KM-12A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-12A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

FS10VS-12A

Abstract: FS10VS-12A-T11
Contextual Info: FS10VS-12A High-Speed Switching Use Nch Power MOS FET REJ03G0272-0100 Under development Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 600 V rDS ON (max) : 0.94 Ω ID : 10 A Outline LDPAK(S)-1 2, 4 4 1 1. 2. 3. 4. 1 2 3 Gate Drain

FS10ASJ-06F

Abstract: FS10ASJ-06F-T13 PRSS0004ZG-A
Contextual Info: FS10ASJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0241-0200 Rev.2.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : 60 V rDS ON (max) : 70 mΩ ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 30 ns Outline