FS10 Search Results

FS10KMA-4A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KMA-4A •§;>> > •+ . ^ >ftfin*'slljü\ecl1 *p- "TVi'S's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE FS10KMA-4A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 • 2.8 ± 0 .2 10V D R IV E • V d s s . 2 0 0 V

FS10UM-5

Abstract: 3DG5 FS10UM5 K775 MAX240 3d fs 45 1.5A 150V power mosfet
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UM-5 HIGH-SPEED SWITCHING USE FS10UM-5 OUTLINE DRAWING Dimensions in mm 0@ © © D © • V d s s . GATE DRAIN SOURCE DRAIN 250V • rDS (ON (MAX) .0 .5 2 Í2

FS100R17KE3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R17KE3 IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage

Contextual Info: CLASS 2 TRANSFORMER FS10-600-C2 Description: The FS10-600-C2 is a series/parallel primary and dual secondary, split bobbin design which operates with either a parallel input of 115V or a series input of 230V. The secondaries are 5V @ 0.6A each. They can be used independently up to

3RG78

Abstract: automatic door infrared sensor automatic door opening sensor infrared sensor transmitter and receiver circuit EAR99H NSC00438 temperature sensors in washing machine sensors in washing machine 3rg7857 EAR99
Contextual Info: Fail-safe sensors SIMATIC FS100 switch strips Switch strips category 4 • Overview The safety strip comprises the mounting strip aluminum rail , the sensitive edge (rubber strip) and an infrared sensor. The sensor, consisting of a transmitter and receiver, has a sensing range of

FS10KMJ-2

Abstract: 10V-se P channel MOSFET 10A
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMJ-2 HIGH-SPEED SWITCHING USE FS10KMJ-2 ' 4V DRIVE ' V d s s . . 100V rDS ON (M A X ). . 0.190

FS10KM6

Abstract: FS10KM-6 C3102
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-6 HIGH-SPEED SWITCHING USE FS10KM-6 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s .3 0 0 V rDS ON (MAX) . 0.68Í2

Contextual Info: CLASS 2 TRANSFORMER FS10-1200-C2 Description: The FS10-1200-C2 is a series/parallel primary and dual secondary, split bobbin design which operates with either a parallel input of 115V or a series input of 230V. The secondaries are 5V @ 1.2A each. They can be used independently up to

684K

Abstract: FS1012-103K
Contextual Info: 3L GLOBAL ELECTRONICS b4E • *1003404 0 0 0 0 0 3 5 SOI ■ FERRITE SHIELDED INDUCTORS FS TYPE FS1012, FS 1416/TYPE FEATURES 1) Vertical, small, lightweight design. 2) Vertical structure simplifies mounting. 3) Inductive interference rare. 4) Excellent Q frequency characteristics.

mosfet fs series

Contextual Info: ILOW VOLTAGE POWER MOSFET FS SERIES 2.5V DRIVE Max. ratings Typ« No. Vass (V) FS1GASH-03 FS10UMH-03 FS10VSH-03 FSI0KM H -03 FS30ASH-03 FS30UMH-03 FS30VSH-03 FS30KMH-03 FS30SMH-03 FS50ASH-03 FS50UMH-03 FS50VSH-03 FS50KMH-03 FS50SMH-03 FS70UMH-03 FS70VSH-03

fs10km

Abstract: mosfet fs series FS10KM-3
Contextual Info: • L O W VOLTAGE POWER MOSFET FS SERIES 1 OV DRIVE (CONTINUED) Max. ratings POWER DEVICES Type No. Voes (V) FS5AS-2 k FS5UM-2 FS5VS-2 FS5KM-2 FS10AS-2 FS10UM-2 FS10VS-2 FS10KM-2 FStOSM-2 FS30AS-2 FS30UM-2 FS30VS-2 FS30KM-2 FS30SM-2 FS50UM-2 FS50VS-2 FS50KM-2

FS100R06KE3

Contextual Info: Technische Information / technical information FS100R06KE3 IGBT-Module IGBT-modules EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

FS10R12YT3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS10R12YT3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !" " # $%& ' / " / # < " * = < !" " 7 " ) *+,- $+ ' 0 ()

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SMJ-3 HIGH-SPEED SWITCHING USE FS10SMJ-3 OUTLINE DRAWING Dimensions in mm ' 4V DRIVE ' V d s s .15 0 V ' rDS ON (M 6 0 m i i

Contextual Info: MITSUBISHI Neh POW ER M O S F E T FS100KM-03 ì HIGH-SPEED SWITCHING USE FS1OOKM-03 OUTLINE DRAWING • 10V DRIVE • VDSS . . 30V • TDS ON (MAX) . •■5.4mQ

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10UMH-03 HIGH-SPEED SWITCHING USE FS10UMH-03 # • 2.5V DRIVE • VDSS . 30V • r o s O N (M A X ) .9 2 m O

Contextual Info: FS10AS-06 High-Speed Switching Use Nch Power MOS FET REJ03G0240-0200 Rev.2.00 Dec 19, 2008 Features • • • • • Drive voltage : 10 V VDSS : 60 V rDS ON (max) : 78 mΩ ID : 10 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Outline

FS10R06VL4

Abstract: FS10R06VL4B2 BS 2G 210 BUW91
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS10R06VL4 B2 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! "# # ! $ # 0+ ! $ 7 # ! < # , = < "# # %&' *+ ,-./

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-03 HIGH-SPEED SWITCHING USE FS10ASH-03 ' 2.5V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYR) .30V . 92mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10SMJ-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. / 3.2 V * 5.45 4V DRIVE V d s s .100V rDS ON (MAX). 0.19Q

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE FS10ASJ-03 ' 4V DRIVE . ' V ' rDS ON (MAX) . d ss ' Id . ' Integrated Fast Recovery Diode (TYP.) .30V . 75mi2 .10A 35ns APPLICATION M otor control, Lamp control, Solenoid control

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMA-5A HIGH-SPEED SWITCHING USE FS10KMA-5A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE . 250V • V • rDS ON (M A X ) .0.52Í2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASH-06 HIGH-SPEED SWITCHING USE FS10ASH-06 ' 2.5V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) .60V . 73mi2 .10A 55ns APPLICATION

Contextual Info: MITSUBISHI Neh POWER MOSFET FS100UM-03 HIGH-SPEED SWITCHING USE FS100UM-03 OUTLINE DRAWING Dimensions in mm 4.5 1.3 ILI U LU qw e Q i q w e r 10V DRIVE V d s s .3 0 V q o -