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    FRONT METAL RECTIFIER Search Results

    FRONT METAL RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U54T-M-2500-12-HB4C
    		Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR PDF
    D1U74T-W-1600-12-HB4AC
    		Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs PDF
    CRG11B
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT Datasheet
    CRG10A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Datasheet
    CMG03A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Datasheet

    FRONT METAL RECTIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PD - 96328 AUTOMOTIVE GRADE AUIRG7CH73K10B • 100% Tested at Probe * Features • • • • • • • • • C Designed for Automotive Application* Solderable Front Metal Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C


    Original     		AUIRG7CH73K10B PDF

    Contextual Info: PD - 97557 AUTOMOTIVE GRADE AUIRG7CH73K6B • 100% Tested at Probe * Features • • • • • • • • • C Designed for Automotive Application* Solderable Front Metal Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C


    Original     		AUIRG7CH73K6B 1200Vare PDF

    dual polarity power supply

    Abstract: RS Components
    Contextual Info: Issued March 1984 F3627 31 2 digit LCD digital panel meter / Stocknumber 258-827 The RS 31 2 digit LCD digital panel meter is housed in a very compact front panel mounting case made of matt black flame retardant ABS which is held in the panel by a simple metal clamp. The meter has a 0.5 inch liquid


    Original     		F3627 330ppm/ dual polarity power supply RS Components PDF

    Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s


    Original     		TV162L027S6PV TV162L027S6PV 11-Mar-11 PDF

    death metal diagram

    Contextual Info: New Product TV210L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s


    Original     		TV210L027S6PV TV210L027S6PV 11-Mar-11 death metal diagram PDF

    Contextual Info: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s


    Original     		TV180L027S6PV TV180L027S6PV 11-Mar-11 PDF

    TVS VISHAY

    Contextual Info: New Product TV210L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s


    Original     		TV210L027S6PV TV210L027S6PV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TVS VISHAY PDF

    Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s


    Original     		TV162L027S6PV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s


    Original     		TV180L027S6PV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product TV210L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s


    Original     		TV210L027S6PV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    TVS VISHAY

    Contextual Info: New Product TV180L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s


    Original     		TV180L027S6PV TV180L027S6PV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TVS VISHAY PDF

    TV060B8P2S4PT

    Abstract: TV060B9P1S4PT TV060B
    Contextual Info: New Product TV060B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 60 mils x 60 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 400 W peak pulse power capability with a 10/1000 s


    Original     		TV060B. 013hay 11-Mar-11 TV060B8P2S4PT TV060B9P1S4PT TV060B PDF

    TVS VISHAY

    Contextual Info: New Product TV162L027S6PV Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s


    Original     		TV162L027S6PV TV162L027S6PV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TVS VISHAY PDF

    bi-directional switches FET

    Abstract: bare Die mosfet Bi-Directional P-Channel mosfet R-THETA Bi-Directional P-Channel list of P channel power mosfet so8 footprint bare chip mosfet Power MOSFET Wafer
    Contextual Info: Flip Chip Power MOSFET: A New Wafer Scale Packaging Technique Aram Arzumanyan, Ritu Sodhi, Dan Kinzer, Hazel Schofield, Tim Sammon International Rectifier Corporation, El Segundo, CA 90245 USA As presented at ISPSD, June 2001 Abstract This paper describes the first flip chip power MOSFET


    Original     		ISPSD-99 bi-directional switches FET bare Die mosfet Bi-Directional P-Channel mosfet R-THETA Bi-Directional P-Channel list of P channel power mosfet so8 footprint bare chip mosfet Power MOSFET Wafer PDF

    TVS VISHAY

    Contextual Info: New Product TV060B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 60 mils x 60 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 400 W peak pulse power capability with a 10/1000 s


    Original     		TV060B. 013trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TVS VISHAY PDF

    Contextual Info: New Product TV180T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 180 mils x 1800 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s


    Original     		TV180T. 11-Mar-11 PDF

    Contextual Info: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s


    Original     		TV162T. 11-Mar-11 PDF

    Contextual Info: New Product TV134T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 134 mils x 134 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3000 W peak pulse power capability with a 10/1000 s


    Original     		TV134T. 11-Mar-11 PDF

    Contextual Info: New Product TV070B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 70 mils x 70 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 600 W peak pulse power capability with a 10/1000 s


    Original     		TV070B. 013hay 11-Mar-11 PDF

    TV210T018S4PV

    Contextual Info: New Product TV210T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 210 mils x 210 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 6600 W peak pulse power capability with a 10/1000 s


    Original     		TV210T. 11-Mar-11 TV210T018S4PV PDF

    TV070B9P1S4PT

    Contextual Info: New Product TV070B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 70 mils x 70 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 600 W peak pulse power capability with a 10/1000 s


    Original     		TV070B. 013trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TV070B9P1S4PT PDF

    Contextual Info: New Product TV070B.S4PT Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 70 mils x 70 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 600 W peak pulse power capability with a 10/1000 s


    Original     		TV070B. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product TV180T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 180 mils x 1800 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 4600 W peak pulse power capability with a 10/1000 s


    Original     		TV180T. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product TV162T.S4PV Series Vishay General Semiconductor PAR Transient Voltage Suppressor Bare Die 162 mils x 162 mils FEATURES a c e • Junction passivation optimized anisotropic rectifier technology design passivated • 3600 W peak pulse power capability with a 10/1000 s


    Original     		TV162T. 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF