FREQ70 Search Results
FREQ70 Datasheets Context Search
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Contextual Info: SDM3201 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20– Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k |
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SDM3201 Freq70M | |
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Contextual Info: 2SC4217 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SC4217 Freq70M | |
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Contextual Info: 2N3948 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)36 I(C) Max. (A)400m Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)15 |
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2N3948 Freq700M | |
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Contextual Info: PG2279 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.5 @I(C) (A) (Test Condition)1.0 |
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PG2279 Freq70MÃ | |
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Contextual Info: 2SA623 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0Ø @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SA623 Freq70M | |
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Contextual Info: FZT696B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V).25Â @I(C) (A) (Test Condition)200m |
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FZT696B Freq70M | |
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Contextual Info: 2SC3952 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) |
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2SC3952 Freq700M | |
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Contextual Info: SK3512 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) |
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SK3512 Freq70M | |
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Contextual Info: 2SC3942 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)30m |
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2SC3942 Freq70M | |
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Contextual Info: SDM3203 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20– Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k |
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SDM3203 Freq70M | |
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Contextual Info: 2SC628 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)400nØ @V(CBO) (V) (Test Condition) |
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2SC628 Freq700M | |
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Contextual Info: PN3439 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)400 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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PN3439 Freq70M | |
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Contextual Info: UPT214 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)850m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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UPT214 Freq70M | |
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Contextual Info: RT2459 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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RT2459 Freq700M | |
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Contextual Info: 2N6463 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)20m |
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2N6463 Freq70M | |
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Contextual Info: 2SA896-2 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)175 V(BR)CBO (V)200 I(C) Max. (A)100m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SA896-2 Freq70M | |
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Contextual Info: 2N6464 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)20m |
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2N6464 Freq70M | |
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Contextual Info: 2N5153+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N5153 Freq70M | |
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Contextual Info: 2N6461 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.1 @I(C) (A) (Test Condition)20m |
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2N6461 Freq70M | |
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Contextual Info: 2N180 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50Â h(FE) Max. Current gain. |
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2N180 Freq700k | |
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Contextual Info: SDM3202 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20– Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k |
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SDM3202 Freq70M | |
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Contextual Info: 2N4429 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)425m Absolute Max. Power Diss. (W)5.0# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)55 |
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2N4429 Freq700M | |
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Contextual Info: 2N4428 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)425m Absolute Max. Power Diss. (W)3.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)55 |
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2N4428 Freq700M | |
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Contextual Info: FCX696B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)200m |
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FCX696B Freq70M | |