FREQ30 Search Results

Contextual Info: A1B630E Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)450p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

TD436

Contextual Info: TD436 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 3.7m Peak Curr. Tol. Total Cap. (F).38p Ip/Iv Min8.0 Vp75m Vv390m Fwd Volt @Ipeak570m Resist. Cutoff Freq30G Series Induct. (H) R(series) (Ohms)5.0 Neg Resist.40 Semiconductor MaterialGermanium

Contextual Info: 112530A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)7.0 Neg Resist.25 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100’

Contextual Info: 102530A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol. Total Cap. (F) Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H) R(series) (Ohms)7.0 Neg Resist.25 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100õ

Contextual Info: A1B630D Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)450p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

Contextual Info: A1B630C Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)450p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H)100p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

Contextual Info: MS1575A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F).40p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30G Series Induct. (H).10n R(series) (Ohms)7.0 Neg Resist.60 Semiconductor MaterialGaSb

Contextual Info: A1B630A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.3m Peak Curr. Tol. Total Cap. (F)450f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq30M Series Induct. (H)300p R(series) (Ohms)9.0 Neg Resist.38 Semiconductor MaterialGaSb

Contextual Info: PZT2222AT1 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)600m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2N372/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: CIL256 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2N3046/78 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m

Contextual Info: 2SA1729 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3736 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200

Contextual Info: 2SC3943 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)110 I(C) Max. (A)150m Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u° @V(CBO) (V) (Test Condition)35

Contextual Info: 2N930/TNT Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC517

Contextual Info: 2SC517 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.140

Contextual Info: 2SC3956 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)200m Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.320

Contextual Info: 2N4350 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.200

Contextual Info: 2N370/33 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)24 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Solid state CCIR ca 152

Abstract: xbp 101 Solid state CCIR "ca 152" ATS 2501 Ic xbp 101 dds fm modulator 6B5 diode AND8266 fr33
Contextual Info: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm T MC 2 1 9 3 1 0 Bi t E n c o d e r Features • • • • • • Applications • Broadcast Television • Nonlinear Video Processing Block Diagram sync/m id PD[23:0] Rev 0.9.5

8fc marking code

Abstract: led matrix 8 8 one colour c65 004 CCIR656 camera n 332 ab rgb to ycbcr four matrix multipliers FR17 diode digital cvbs encoder 1024 768 diodes sy 360 e34 fairchild
Contextual Info: www.fairchildsemi.com TMC2193 10 Bit Encoder Features • • • • • • • • • • • Applications • Broadcast Television • Nonlinear Video Processing Block Diagram sync/mid PREPROCESSOR gr/y Gr/Y bl/cb Bl/Pb OVERLAY rd/cr MIXER OL[4:0] KEY

Solid state CCIR ca 151

Abstract: rgb to ycbcr four matrix multipliers Diode SY 345 CCIR601 CCIR656 PD20 TMC2193 OUTPUT YPbPr y718 MCF10
Contextual Info: www.fairchildsemi.com TMC2193 10 Bit Encoder Features • • • • • • Multiple input formats – 24 bit RGB – 20 bit CCIR601 – 10 bit CCIR656 – 10 bit Digital Composite • Synchronization modes – Master – Slave – Genlock – CCIR656 • Subcarrier modes

Contextual Info: www.cadeka.com TMC2192 10 Bit Encoder Features • Multiple input formats – 20 bit CCIR601 – 10 bit CCIR656 – 10 bit Digital Composite • Synchronization modes – Master – Slave – Genlock – CCIR656 • Subcarrier modes – Free-run – Subcarrier reset