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    FREQ20M Search Results

    FREQ20M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CY7C4261

    Abstract: CY7C4271 CY7C4271-15LMB
    Contextual Info: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4271-15LMB 32-por CY7C4261 CY7C4271 CY7C4271-15LMB PDF

    CY7C4275

    Abstract: CY7C4285 CY7C42X5 CY7C4285-15ASC 42756
    Contextual Info: CY7C4275 CY7C4285 PRELIMINARY 32K/64Kx18 Deep Sync FIFOs Features Functional Description The CY7C4275/85 are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 18 bits wide and are pin/functionally compatible to the


    Original     		CY7C4275 CY7C4285 32K/64Kx18 CY7C4275/85 CY7C42X5 CY7C4275) CY7C4285) CY7C4275 CY7C4285 CY7C4285-15ASC 42756 PDF

    CY7C4281

    Abstract: CY7C4291
    Contextual Info: fax id: 5415 Back PRELIMINARY CY7C4281 CY7C4291 64K/128Kx9 Deep Sync FIFOs Features • Pin-compatible density upgrade to IDT72201/11/21/31/41/51 • High-speed, low-power, first-in first-out FIFO memories • 64k x 9 (CY7C4281) • 128k x 9 (CY7C4291) • 0.5 micron CMOS for optimum speed/power


    Original     		CY7C4281 CY7C4291 64K/128Kx9 IDT72201/11/21/31/41/51 CY7C4281) CY7C4291) 100-MHz CY7C4281/91 CY7C42X1 CY7C4281 CY7C4291 PDF

    Contextual Info: fax id: 5416 CY7C4275 CY7C4285 32K/64Kx18 Deep Sync FIFOs Features Functional Description • H ig h -sp eed , low -pow er, first-in firs t-o u t FIFO m em o ries . 32K x 18 (C Y 7 C 42 75 ) • 64K x 18 (C Y 7 C 42 85 ) • 0.5 m icron C M O S fo r optim um sp e e d /p o w e r


    OCR Scan     		CY7C4275 CY7C4285 32K/64Kx18 PDF

    Contextual Info: fax id: 5412 CY7C4261 CY7C4271 16K /32K x9 D eep S yn c FIFO s Functional Description Featu res . • • • The CY7C4261/71 are high-speed, low-power, first-in first-out FIFO memories with clocked read and write interfaces. All are 9 bits wide. The CY7C4261/71 are pin-compatible to the


    OCR Scan     		CY7C4261 CY7C4271 CY7C4261) CY7C4271) 100-MHz 32-pin PDF

    CY7C4261

    Abstract: CY7C4271 7C4271
    Contextual Info: fax id: 5412 1CY 7C42 71 CY7C4261 CY7C4271 PRELIMINARY 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power


    Original     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz CY7C4261 CY7C4271 7C4271 PDF

    CY7C4261

    Abstract: CY7C4271
    Contextual Info: fax id: 5412 CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    Original     		CY7C4261 CY7C4271 16K/32Kx9 CY7C4261) CY7C4271) 100-MHz 32-por CY7C4261 CY7C4271 PDF

    A64 Package

    Contextual Info: fax id: 5419 CYPRESS CY7C4282 CY7C4292 PRELIMINARY 64K/128Kx9 Deep Sync FIFOs Features Functional Description High-speed, low-power, first-in first-out FIFO memories 64k X 9 (CY7C4282) 128k x 9 (CY7C4292) 0.5 micron CMOS for optimum speed/power High-speed, Near Zero Latency (True Dual-Ported


    OCR Scan     		CY7C4282 CY7C4292 64K/128Kx9 CY7C4282/92 64-Lead 10x10 A64 Package PDF

    Contextual Info: 1756-1460 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)140 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq20M req20M PDF

    Contextual Info: 2N2697 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2697 Freq20M time80n PDF

    Contextual Info: SM3184 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		SM3184 Freq20M PDF

    Contextual Info: 2SD1236L Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SD1236L Freq20M PDF

    Contextual Info: 1781-0640 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)50 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq20M PDF

    Contextual Info: 2N2698 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2698 Freq20M time80n PDF

    Contextual Info: 2SD1236LS Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.7 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)0.1mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SD1236LS Freq20M PDF

    Contextual Info: BD232 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		BD232 Freq20M PDF

    Contextual Info: 2N5665+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)400 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)3.0


    Original     		2N5665 Freq20M PDF

    Contextual Info: 1756-1840 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V)180 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq20M req20M PDF

    Contextual Info: 2SB1094 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SB1094 Freq20M PDF

    Contextual Info: 1756-1440 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)140 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq20M req20M PDF

    Contextual Info: 2SD2050 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.5k


    Original     		2SD2050 Freq20M PDF

    Contextual Info: 2N5661+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)400 V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)1.0


    Original     		2N5661 Freq20M PDF

    Contextual Info: 1776-1260 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)60 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq20M PDF

    Contextual Info: 2SD1906 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2SD1906 Freq20M PDF