FREQ20 Search Results

Contextual Info: A1G420D Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq20G Series Induct. (H)100p R(series) (Ohms)6.0 Neg Resist.52 Semiconductor MaterialGermanium

Contextual Info: MS1573A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F).80p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq20G Series Induct. (H).10n R(series) (Ohms)6.0 Neg Resist.60 Semiconductor MaterialGaSb

Contextual Info: A1A420E Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 3.5m Peak Curr. Tol. Total Cap. (F)520f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq20G Series Induct. (H)100p R(series) (Ohms)10 Neg Resist.52 Semiconductor MaterialGaAs Maximum Operating Temp (øC)100’

Contextual Info: MS1573 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.20m Total Cap. (F).80p Ip/Iv Min12 Vp60m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq20G Series Induct. (H).10n R(series) (Ohms)7.0 Neg Resist.30 Semiconductor MaterialGaSb

Contextual Info: A1G420E Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq20G Series Induct. (H)100p R(series) (Ohms)6.0 Neg Resist.52 Semiconductor MaterialGermanium

Contextual Info: A1G420C Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq20G Series Induct. (H)100p R(series) (Ohms)6.0 Neg Resist.52 Semiconductor MaterialGermanium

Contextual Info: A1B420E Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.3m Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq20G Series Induct. (H)100p R(series) (Ohms)10 Neg Resist.52 Semiconductor MaterialGaSb Maximum Operating Temp (øC)100’

metal case REGULATOR IC 7812 pin diagram

Abstract: CY7C4275 CY7C4285 CY7C42X5
Contextual Info: fax id: 5416 ^;aaazgg st CY7C4275 CY7C4285 PRELIMINARY ; U I F lm c b ti 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries 32K x 18 (C Y 7 C 42 75 ) 64K x 18 (C Y 7 C 42 85 )

Contextual Info: GEC P L E S S E Y MAY 1997 M 1 O !\ I l f I () K S PRELIMINARY INFORMATION DS4575 -1.5 VP5311B/VP5511B NTSC/PAL DIGITAL VIDEO ENCODER (supersedes edition in October 1996 Media 1C Hanbook, HB4599-1.0) The VP5311/VP5511 converts digital Y, Cr, Cb, data into analog NTSC/PAL composite video and S-video signals.

Contextual Info: WMGEC piessey PRELIM IN ARY INFORMATION DS4516- 1.1 VP551D NTSC/PAL DIGITAL VIDEO ENCODER The VP551 converts digital Y, Cr, Cb, data into analog NTSC/PAL com posite video and S-video signals The outputs are capable of driving doubly term inated 75 ohm loads with standard video levels.

Contextual Info: fax id: 5415 W CYPRESS CY7C4281 CY7C4291 PRELIMINARY 64K/128Kx9 1 Meg Deep Sync FIFOs Features • P in -c o m p a tib le d en sity u p g ra d e to ID T 722 01 /11/21/31/41/51 H ig h-speed , low -p ow er, first-in firs t-o u t F IF O m em o ries Functional Description

Contextual Info: fax id: 5413 CY7C4255 CY7C4265 3F CYPRESS 8K/16Kx18 Deep Sync FIFOs Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 8K x 18 (C Y 7 C 42 55 ) • 16K x 18 (C Y 7 C 42 65 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r

Contextual Info: ag GEC PLESSEY MAY1995 P R E L IM IN A R Y IN F O R M A T IO N S E M I C O N D U C T O R S DS402S- 1.7 VP531 NTSC/PAL DIGITAL VIDEO ENCODER The VP531 converts digital Y, Cr, Cb, data into analog NTSC/PAL composite video and S-video signals The outputs are capable of driving doubly terminated 75 ohm

Contextual Info: SEPTEMBER 1995 PRELIMINARY INFORMATION DS4028 - 2.0 VP531 NTSC/PAL DIGITAL VIDEO ENCODER The VP531 converts digital Y, Cr, Cb, data into analog NTSC/PAL composite video and S-video signals The outputs are capable of driving doubly terminated 75 ohm loads with standard video levels.

Contextual Info: BR200B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.

Contextual Info: 2N6988 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)600m P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2N4405+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m

Contextual Info: 2SA1125 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m

Contextual Info: FF2907J Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2N3486 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: B3458 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)7.5 Maximum Operating Temp (øC) I(CBO) Max. (A).02mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

Contextual Info: 2906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: 2SA1125T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m

Contextual Info: PC107 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.600 h(FE) Max. Current gain.