FREQ17 Search Results

Contextual Info: DC1520R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandJ Test Freq17G Frequency Min. (Hz)10G Frequency Max. (Hz)20G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap.60f Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: DC1585 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandJ Test Freq17G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)8.0 Maximum Conversion Loss (dB)6.5

Contextual Info: MSS30.242H30 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq175G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: MSS30.142E20 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq175G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: DC1520 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandJ Test Freq17G Frequency Min. (Hz)12G Frequency Max. (Hz)18G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit @Power Level (test) (W)

Contextual Info: MSS30.050P55 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq175G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: MSS30.242E35 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq175G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: MSS30.142H20 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandM+ Test Freq175G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

2N6521

Contextual Info: 2N6521 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k

Contextual Info: B5-8 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30â V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: JO4036 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)6.5 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)10mx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: SD1576 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.5.0 h(FE) Max. Current gain.

Contextual Info: 2N6198 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0m¥x @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain. h(FE) Max. Current gain.

2N6197

Contextual Info: 2N6197 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0m¥x @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N3467+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)1.0

Contextual Info: 2N3253S+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.75

Contextual Info: 2SC174 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SD1272-2 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

heps3009

Contextual Info: HEPS3009 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)36â V(BR)CBO (V)36 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

Contextual Info: ZTX653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.5 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2SC1297 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)50 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: 2SB310 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)140 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)43 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)220uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SWT3588 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25ã V(BR)CBO (V)25 I(C) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: B5-8Z Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)14 V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.