FREE IC NPN TRANSISTOR Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R

MJE13001

Abstract: MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B

MJE-13001

Abstract: MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G „ ORDERING INFORMATION Normal MJE13001-x-T92-B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060/A NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001-PL-x-T92-B

MJE13001

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR  FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR „ FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-Q-x-AB3-A-R

2SD313

Abstract: 2SB507 2sd313 equivalent 2SD313 E
Contextual Info: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE

MJE-13001

Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R

MUN5211DW

Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW 7L Marking
Contextual Info: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 P b Lead Pb -Free 1 4 5 6 NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Thermal Characteristics Characteristics (1)

Contextual Info: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volt VOLTAGE POWER 330 mW • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . Halogen Free

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free

2SC5343 equivalent

Abstract: 2SC5343 equivalent for 2SC5343 transistor 2sc5343
Contextual Info: 2SC5343 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 * Excellent hFE Linearity : hFE 2 =100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)

Contextual Info: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 * “G” Lead Pb -Free 1 4 5 6 NPN+NPN 2 4 3 SOT-363(SC-88) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Symbol VCEO VCBO IC Value

Contextual Info: MMDT3904TB6 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V SOT-563 • Collector current IC = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.

Contextual Info: BC817-16W SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 300 mW FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 500mA • Lead free in comply with EU RoHS 2011/65/EU directives

bc847cs

Contextual Info: BC847CSTB6 DUAL NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 45 Volts POWER 210 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 45V • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

Contextual Info: MMBT2222ATB NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Lead free in comply with EU RoHS 2011/65/EU directives

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2011/65/EU directives