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    FREE FOR FULL WAVE BRIDGE RECTIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC331AD7LQ103KX18D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC331CD7LP683KX19L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC332QD7LP104KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC355DD7LP684KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GQM2195G2E151GB12D
    Murata Manufacturing Co Ltd High Q Chip Multilayer Ceramic Capacitors (>100Vdc) for General Purpose PDF

    FREE FOR FULL WAVE BRIDGE RECTIFIERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1n5819 equivalent

    Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
    Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG PDF

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL PDF

    "Power Diode"

    Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
    Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D "Power Diode" 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5817G PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19 PDF

    DIODE 1N5822

    Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL PDF

    1N5822RL

    Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
    Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL PDF

    BU2006

    Abstract: UL 1557 BU2008
    Contextual Info: New Product BU2006 thru BU2010 Vishay General Semiconductor High-Current Density Single-Phase Bridge Rectifiers FEATURES Case Style BU • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - ~ ~ • Superior thermal conductivity


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    BU2006 BU2010 E309391 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 UL 1557 BU2008 PDF

    1n5819 equivalent

    Abstract: 1n5819
    Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    bu1210

    Abstract: E309391
    Contextual Info: New Product BU1206 thru BU1210 Vishay General Semiconductor High-Current Density Single-Phase Bridge Rectifiers FEATURES Case Style BU • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - ~ ~ • Superior thermal conductivity


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    BU1206 BU1210 E309391 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 bu1210 E309391 PDF

    UL 1557

    Abstract: bu1006a BU100 BU1008A
    Contextual Info: New Product BU1006A thru BU1010A Vishay General Semiconductor High-Current Density Single-Phase Bridge Rectifiers FEATURES Case Style BU • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - ~ ~ • Superior thermal conductivity


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    BU1006A BU1010A E309391 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 UL 1557 BU100 BU1008A PDF

    PB3006

    Abstract: PB3010 J-STD-002
    Contextual Info: New Product PB3006 thru PB3010 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM ~ ~ + • UL recognition file number E312394 QQQX2 UL 1557 (see *) - Case Style PB ~ ~ • Enhanced high-current density single in-line package


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    PB3006 PB3010 E312394 22-B106 2002/95/EC 2002/96/EC 18-Jul-08 PB3010 J-STD-002 PDF

    PB3510

    Abstract: pb3506 J-STD-002 pb3508
    Contextual Info: New Product PB3506 thru PB3510 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM ~ ~ + • UL recognition file number E312394 QQQX2 UL 1557 (see *) - Case Style PB ~ ~ • Enhanced high-current density single in-line package


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    PB3506 PB3510 E312394 22-B106 2002/95/EC 2002/96/EC 18-Jul-08 PB3510 J-STD-002 pb3508 PDF

    PB5006

    Abstract: UL 1557 PB5010 J-STD-002 84809
    Contextual Info: New Product PB5006 thru PB5010 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM ~ ~ + • UL recognition file number E312394 QQQX2 UL 1557 (see *) - Case Style PB ~ ~ • Enhanced high-current density single in-line package


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    PB5006 PB5010 E312394 22-B106 2002/95/EC 2002/96/EC 18-Jul-08 UL 1557 PB5010 J-STD-002 84809 PDF

    bu2508

    Abstract: BU2510 BU2506 BU2508 bridge UL 1557
    Contextual Info: New Product BU2506 thru BU2510 Vishay General Semiconductor High-Current Density Single-Phase Bridge Rectifiers FEATURES Case Style BU • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - ~ ~ • Superior thermal conductivity


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    BU2506 BU2510 E309391 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 bu2508 BU2510 BU2508 bridge UL 1557 PDF

    BU2508

    Abstract: BU2506
    Contextual Info: New Product BU2506 thru BU2510 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


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    BU2506 BU2510 E309391 BU25065S) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05 BU2508 PDF

    n5822

    Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
    Contextual Info: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan
    1N5820/D 1N5820 1N5821 1N5822 1N5B22 n5822 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820 PDF

    BU12065S

    Contextual Info: New Product BU1206 thru BU1210 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


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    BU1206 BU1210 E309391 BU12065S) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 08-Apr-05 BU12065S PDF

    BU100

    Abstract: BU1006A BU1006A5S BU1008A
    Contextual Info: New Product BU1006A thru BU1010A Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


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    BU1006A BU1010A E309391 BU1006A5S) 2002/95/EC 2002/96/EC 08-Apr-05 BU100 BU1006A5S BU1008A PDF

    BU100

    Contextual Info: New Product BU1006 thru BU1010 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


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    BU1006 BU1010 E309391 BU10065S) 2002/95/EC 2002/96/EC 08-Apr-05 BU100 PDF

    BU2006

    Abstract: BU2008
    Contextual Info: New Product BU2006 thru BU2010 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


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    BU2006 BU2010 E309391 BU20065S) 2002/95/EC 2002/96/EC 08-Apr-05 BU2008 PDF

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    PDF

    Contextual Info: New Product BU1206 thru BU1210 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


    Original
    BU1206 BU1210 E309391 BU12065S) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 18-Jul-08 PDF

    BU2508

    Contextual Info: New Product BU2506 thru BU2510 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


    Original
    BU2506 BU2510 E309391 BU25065S) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 18-Jul-08 BU2508 PDF

    BU1510

    Abstract: BU1506
    Contextual Info: New Product BU1506 thru BU1510 Vishay General Semiconductor Enhanced Power Bridge Rectifiers FEATURES PowerBridge TM • UL recognition file number E309391 QQQX2 UL 1557 (see *) • Thin single in-line package + ~ ~ - Case Style BU ~ ~ • Available for BU-5S lead forming option


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    BU1506 BU1510 E309391 BU15065S) 2002/95/EC 2002/96/EC 18-Jul-08 BU1510 PDF