FREE ENERGY Search Results

mutoh ip-220

Contextual Info: Database for Properties of Lead-Free Solder Alloys DATABASE FOR PROPERTIES OF LEAD-FREE SOLDER ALLOYS Version 1.0 This database is a joint project of ELFNET and COST 531 Action. COST 531 ACTION ON LEAD-FREE SOLDER ALLOYS EURPEAN LEAD-FREE SOLDERING NETWORK

hb1c

Abstract: HOOKM353 UL-1598A UL-1598 Occupancy Sensor LOOPM353 tunnel sensor PPH480U
Contextual Info: DuroSiteTM LED High Bay for Industrial & Commercial Applications www.dialight.com 1 DuroSiteTM LED High Bay Features & Benefits w 80% lumen maintenance after 60,000 hours w Up to 79 lm/w w Significant energy savings w Instant on/off w Maintenance free w Mercury free

NVD6824NL

Contextual Info: NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N−Channel Features Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

echelon FT-x2

Abstract: FT-X2 14250R FT-X1 echelon FT-x1 echelon FT-x2 14250r ftx1 14240r 14250R-300 14240R Magnetic ink CEA-709
Contextual Info: FTXL 3190 Free Topology Transceiver Models 14260R-800, 14240R, and 14250R-300 Description The FTXL 3190 Free Topology Transceiver is a high-performance free topology transceiver and media access controller for developing high-performance devices based on the LonTalk

FT-X1

Abstract: echelon FT-x1 echelon FT-x2 14240R 14250R-300 EN14908 FT-X1 echelon ftx1 14240r EN14908-1 altera manchester
Contextual Info: FTXL 3190 Free Topology Transceiver Models 14260R-800, 14240R, and 14250R-300 Description The FTXL 3190 Free Topology Transceiver is a high-performance free topology transceiver and media access controller for developing high-performance devices based on the LonTalk

Contextual Info: NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol

Contextual Info: NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter Symbol

Contextual Info: NDF60N360U1, NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Parameter

Contextual Info: NVD5803N Power MOSFET 40 V, 85 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Echelon FTT-10A

Abstract: ftx1 14240r FT-X1 echelon FT-x1 14230R-450 E4S40 ftt-10a echelon FT-x2 14222R-800 14212R-500
Contextual Info: FT 3120 and FT 3150 ® Free Topology Smart Transceivers ▼ Combines an ANSI/CEA 709.3-1999 compliant free topology twisted pair transceiver with a Neuron 3120 or Neuron 3150 network processor core ▼ Supports polarity insensitive free topology star, daisy chain,

Echelon FTT-10A

Abstract: IC A 3120 echelon FT-x1 FT-X1 ftx1 14240r ftt-10a 14230R-450 FT3150 echelon FT-x2 A 3150 ic
Contextual Info: FT 3120 and FT 3150 ® Free Topology Smart Transceivers t Combines an ANSI/CEA 709.3-1999 compliant free topology twisted pair transceiver with a Neuron 3120 or Neuron 3150 network processor core t Supports polarity insensitive free topology star, daisy chain,

CF10-07-04

Abstract: 24568 CF10-10-02 Igus CF10-01-12 CF10-02-04 CF10-05-07 CF10-05-04 CF10-15-07 CF10
Contextual Info: CF10 Control/Power Cables 5x Chainflex CF10 TPE low temperature Energy Chain® cable, shielded1 , flame-retardant, oil-resistant, bio-oil-resistant✝, PVC-free/ halogen-free Price Index Construction Conductors: Bare copper conductors with superior flexibility very finely stranded for cross-sections 26-16 AWG,

NVD5862

Contextual Info: NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NVD5867

Abstract: NVD5867NLT4G 67LG 051BSC
Contextual Info: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NVD5865

Abstract: NVD5865NLT4G
Contextual Info: NVD5865NL Power MOSFET 60 V, 46 A, 16 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

01N60

Abstract: BFR 965 01N6 dpak 369C NDD01N60
Contextual Info: NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage

NDD01N60

Contextual Info: NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage

ic 7400

Abstract: MBB100A6 MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6
Contextual Info: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes In order to maintain switching losses to minimal, improving Free Wheeling Diodes, (FWD), is essential and Hitachi's version of this is the Soft and Fast Recovery (SFD) Free Wheeling Diode.

Contextual Info: NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel Features • • • • • Low RDS on to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

TPA2033D1

Abstract: TPA2010D1 TPA2032D1 TPA2032D1YZF TPA2032D1YZFR TPA2033D1YZF TPA2034D1 TPA2034D1YZF TPA2034D1YZFR
Contextual Info: TPA2032D1 TPA2033D1 TPA2034D1 www.ti.com SLOS476 – JUNE 2006 2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER • Wafer Chip Scale Packaging WCSP – NanoFree Lead-Free (Pb-Free: YZF) FEATURES • • • • • Maximize Battery Life and Minimize Heat

Contextual Info: NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted NDD NDT Drain−to−Source Voltage

TPA2033D1

Contextual Info: TPA2032D1 TPA2033D1 TPA2034D1 www.ti.com SLOS476 – JUNE 2006 2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER • Wafer Chip Scale Packaging WCSP – NanoFree Lead-Free (Pb-Free: YZF) FEATURES • • • • • Maximize Battery Life and Minimize Heat

TPA2033D1

Contextual Info: TPA2032D1 TPA2033D1 TPA2034D1 www.ti.com SLOS476 – JUNE 2006 2.75-W FIXED GAIN MONO FILTER-FREE CLASS-D AUDIO POWER AMPLIFIER • Wafer Chip Scale Packaging WCSP – NanoFree Lead-Free (Pb-Free: YZF) FEATURES • • • • • Maximize Battery Life and Minimize Heat

NDD03N80Z-1G

Contextual Info: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX