FRAM I2C Search Results

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13109-6E FRAM MB85RC64 MB85RC64 is a 64K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-0v02-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–6E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–7E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-0v01-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-3v0-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RC64

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-2v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-3v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

MB85RC256VPF-G-JNERE2

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-2v0-E Memory FRAM 256 K 32 K x 8 Bit I2C MB85RC256V • DESCRIPTION The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

RC16V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-4v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-5v1-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-9v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

fram i2c

Contextual Info: Rev 0; 12/06 Accurate I2C RTC with Integrated TCXO/Crystal/FRAM The DS32x35 accurate real-time clock RTC is a temperature-compensated clock/calendar that includes an integrated 32.768kHz crystal and a bank of nonvolatile memory in a single package. The nonvolatile memory is

Contextual Info: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Volatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC

ADC10B

Abstract: 6P15
Contextual Info: MSP430FR573x MSP430FR572x SLAS639 – APRIL 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • • Embedded Non-Volatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC

FM24C16B

Abstract: FM24C16 FM24C16A FM24C16A-G FM24C16A-GTR FM24C16A-S EEPROM 256 bytes 24c
Contextual Info: FM24C16A 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1012 Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: VRS51L3074 Rev 1.4 Preliminary Datasheet High-Performance 8051 MCU + 8KB FRAM Overview Feature Set The VRS51L3074 is a high performance, 8051-based microcontroller coupled with a fully integrated array of peripherals for addressing a broad range of embedded design applications.

AEC-Q100

Abstract: FM24CL16 FM24CL16-DG FM24CL16-G FM24CL16-GTR FM24CL16-S 4L16
Contextual Info: FM24CL16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Low Power Operation

pj 87 diode

Abstract: pj 69 SMD diode
Contextual Info: MSP430FR573x MSP430FR572x SLAS639A – JULY 2011 – REVISED OCTOBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • 2 • • • • • Embedded Nonvolatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC

SLAS639A

Contextual Info: MSP430FR573x MSP430FR572x SLAS639A – JULY 2011 – REVISED OCTOBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES • 2 • • • • • Embedded Nonvolatile FRAM – Supports Universal Memory – Ultra-Fast Ultra-Low-Power Write Cycle – Error Correction Coding ECC