FR4 EPOXY 4.3 Search Results

fr4 94v0

Contextual Info: ADVANCED Low Insertion Force PGA Sockets INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 ■Email advintcorp@aol.com • Internet http://www.advintcorp.com Molded & FR-4 Low Insertion Force PGA Sockets

st microelectronics powerso-10 marking

Abstract: TLPxxG DA108S1 LCP1511D TLP140M VDE0433 VDE0878 B1000-5
Contextual Info: TLPxxM/G/G-1 TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any sensitive telecom equipment requiring protection against lightning : Analog and ISDN line cards Main Distribution Frames GND TIP

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

schaffner ri 229 pc

Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

marking z52

Abstract: STPS0520Z STPS0520Z10K
Contextual Info: STPS0520Z SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF AV 0.5 A VRRM 20 V VF (max) 0.32 V FEATURES AND BENEFITS • ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING DESCRIPTION Single Schottky rectifier suited for switch mode

CMOZ5V1C

Abstract: CMOZ18VC CMOZ2V4C
Contextual Info: Central CMOZ2V4C THRU CMOZ43VC TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 2% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4C Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™

AN533

Abstract: TN4035-600G TN4035-600G-TR 600G
Contextual Info: TN4035-600G 40A SCRs MAIN FEATURES: A Symbol Value Unit IT RMS 40 A VDRM/VRRM 600 V IGT 35 mA G K A DESCRIPTION K A G The TN4035-600G is designed for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in

Contextual Info: Preliminary Product Description SLX-2143 The Sirenza Microdevices’ SLX-2143 is a low noise amplifier module operating in the 1700 - 2200 MHz frequency band. This device has been optimized to serve high linearity base station applications where a high intercept point is

MBRS360T3G

Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NRVBS3200T3

Abstract: NRVBS3200T3G power rectifier MBRS3200T3 Rev.5 MBRS3200T3D
Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

403A03

Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: Thal H E W L E T T WLEM P A C K A R D 1.5 - 8 GHz Low N oise GaAs MMIC Amplifier Technical Data MGA-86576 F e a tu re s • • • • 1.6 dB N oise Figure at 4 GHz 23 dB Gain at 4 GHz +6 dBm PldB at 4 GHz Single +5 V Bias Supply Surface M ount C eram ic

NRVBS2040LT3G

Abstract: 403A-0 MBRS2040LT3G
Contextual Info: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation

Contextual Info: MBR5H100MFS, NRVB5H100MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • Board Mounting

NJM2878F3

Abstract: NJM2878F4 NJM2878 SC82AB SC88A F423
Contextual Info: NJM2878 Low Dropout Voltage Regulator GENERAL DESCRIPTION The NJM2878 is a 150mA output low dropout voltage regulator with ON/OFF control. Advanced bipolar technology achieves low noise, high ripple rejection, high accuracy and low quiescent current. Small packaging SC-88A/SC82AB and very small packaging

Contextual Info: SGS-ÏHOMSON TN1625-G SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The TN1625 series of Silicon Controlled Rectifiers uses a high performance glass passivated tech­ nology. This SCR is designed for power supplies up to

triac ST 024

Abstract: T1250H-6I T1250H-6T T1235H T1235H-6G T1235H-6G-TR T1235H-6I T1235H-6T T1250H T1250H-6G
Contextual Info: T1235H, T1250H Series Snubberless High temperature 12 A Triacs Main Characteristics A2 Symbol Value Unit IT RMS 12 A VDRM/VRRM 600 V IGT 35 or 50 mA G A1 A2 A2 Features • Medium current Triac ■ 150° C max. Tj turn-off commutation ■ Low thermal resistance with clip bonding

1N4099

Abstract: 1N4135 1N4614 1N4627 1PMT4614 1PMT4615 EIA-481-B J-STD-020B
Contextual Info: 1PMT4614e3 thru 1PMT4627e3, 1PMT4099e3 thru 1PMT4135e3 POWERMITETM Low Noise 1 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE This Microsemi Powermite surface mount low noise Zener package series provides a higher power handling capability that are also RoHS compliant.

Low Noise Zener Diode

Abstract: cha marking code marking chc CMHZ4619 CMHZ4620 CMHZ4621 CMHZ4622 CMHZ4627 Marking chv CMHZ4615
Contextual Info: CMHZ4614 THRU CMHZ4627 SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 1.8 VOLTS THRU 6.2 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4614 Series Silicon Zener Diode is a high quality voltage regulator

13T sx2

Contextual Info: Thal H EW LETT 1 "EM P A C K A R D 1.5 - 8 GHz Low N oise GaAs MMIC A m plifier Technical Data MGA-86576 F ea tu res • 1.6 dB Noise Figure at 4 GHz • 23 dB Gain at 4 GHz • +6 dBm PidB at 4 GHz • Single +5 V Bias Supply S u rface M ount C eram ic P a ck a g e

Contextual Info: Who mLftM 1 HEW LETT PACKARD Zero Bias Schottky Diode Chip for Hybrid Integrated Circuits Technical Data HSMS-0005 Features • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • High Detection Sensitivity

Contextual Info: STTH1002C High efficiency ultrafast diode Datasheet - production data Features A1 • Suited for SMPS K A2  Low losses  Low forward and reverse recovery times  Insulated package: TO-220FPAB  High junction temperature  Low leakage current A2

NBRS2H100T3G

Abstract: NBRS2H100 Schottky b210 A210G
Contextual Info: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with

1553B

Contextual Info: ProtoBox -1553B Kit A Hammond 1553B soft-side plastic enclosure packaged with a matching ProtoBoard 2-hole per strip PCB. BusBoard Prototype Systems - Built for designers www.BusBoard.net sales@busboard.net BPS-MAR-KIT-1553B-001 Rev 3.00 ProtoBox-1553B - ProtoBoard + Box