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    FQU8P10TU Search Results

    FQU8P10TU Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQU8P10TU
    		Fairchild Semiconductor 100V P-Channel QFET Original PDF 675.2KB 9
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    FQU8P10TU Price and Stock

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    Rochester Electronics LLC FQU8P10TU

    POWER FIELD-EFFECT TRANSISTOR, 6
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    DigiKey FQU8P10TU Bulk 44,805 734
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    FLIP ELECTRONICS FQU8P10TU

    MOSFET P-CH 100V 6.6A IPAK
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    DigiKey FQU8P10TU Bulk 14,136 5,040
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    onsemi FQU8P10TU

    MOSFET P-CH 100V 6.6A IPAK
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    Avnet Americas FQU8P10TU Tube 2,381
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    Verical () FQU8P10TU 16,460 1,107
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    FQU8P10TU 6,955 1,107
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    Newark FQU8P10TU Bulk 305 1
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    Rochester Electronics FQU8P10TU 44,805 1
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    Flip Electronics FQU8P10TU 14,136
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    FAIRCHILD FQU8P10TU

    Trans MOSFET P-CH 100V 6.6A 3-Pin(3+Tab) IPAK Tube
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    Verical () FQU8P10TU 73,536 1,107
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    FQU8P10TU 7,080 1,107
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    FQU8P10TU 2,274 1,107
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    Fairchild Semiconductor Corporation FQU8P10TU

    Power MOSFET, P-Channel, QFET®, -100 V, -6.6 A, 530 mΩ, IPAK
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    Rochester Electronics FQU8P10TU 94,502 1
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    ComSIT USA FQU8P10TU 2,240
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    FQU8P10TU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQD8P10 / FQU8P10 P-Channel QFET MOSFET -100 V, -6.6 A, 530 mΩ Description Features • -6.6 A, -100 V, RDS on = 530 mΩ (Max) @ VGS = -10 V, ID = -3.3 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		FQD8P10 FQU8P10 PDF

    FQU8P10TU

    Contextual Info: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU PDF