FQU2N100 Search Results
FQU2N100 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQU2N100 |
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1000 V N-Channel MOSFET | Original | 634.2KB | 9 | ||
| FQU2N100TU |
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1000V N-Channel QFET | Original | 634.2KB | 9 |
FQU2N100 Price and Stock
onsemi FQU2N100TUMOSFET N-CH 1000V 1.6A IPAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQU2N100TU | Tube |
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FQU2N100TU | 4,394 | 429 |
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FQU2N100TU | 4,394 | 1 |
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FQU2N100TU | 47,876 |
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Get Quote | |||||||
Fairchild Semiconductor Corporation FQU2N100TUPOWER FIELD-EFFECT TRANSISTOR, 1.6A I(D), 1000V, 9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQU2N100TU | 2,896 |
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Buy Now | |||||||
| FQU2N100TU | 592 |
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Buy Now | ||||||||
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FQU2N100TU | 543 |
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Get Quote | |||||||
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FQU2N100TU | 24,605 |
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FQU2N100 Datasheets Context Search
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Contextual Info: QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD2N100/FQU2N100 | |
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Contextual Info: QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD2N100/FQU2N100 | |
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Contextual Info: FQD2N100 / FQU2N100 N-Channel QFET MOSFET 1000 V, 1.6 A, 9 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to |
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FQD2N100 FQU2N100 | |
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Contextual Info: QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD2N100/FQU2N100 FQD2N100 FQU2N100 | |
Fairchild 2N100Contextual Info: FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD2N100/FQU2N100 FQU2N100 O-251 FQU2N100TU Fairchild 2N100 | |
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Contextual Info: FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQD2N100/FQU2N100 FQD2N100TM FQD2N100TF O-252 | |
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Contextual Info: FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD2N100/FQU2N100 | |
fqpf5n60c
Abstract: FAN7711 FQPF18N50 Fairchild MOSFET FQT1N80 FQP9N50C FQPF*5n50c fjp13009 FJP5027 FQD7P20
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FAN7532/FAN7711 FAN7544 FCPF7N60 O-220F FCPF11N60 FCPF20N60 fqpf5n60c FAN7711 FQPF18N50 Fairchild MOSFET FQT1N80 FQP9N50C FQPF*5n50c fjp13009 FJP5027 FQD7P20 |