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    FQU1N60TU Search Results

    FQU1N60TU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQU1N60TU
    		Fairchild Semiconductor 600V N-Channel QFET Original PDF 553.98KB 9
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    FQU1N60TU Price and Stock

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    Rochester Electronics LLC FQU1N60TU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60TU Tube 607 446
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    onsemi FQU1N60TU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60TU Tube 5,040
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    Verical FQU1N60TU 607 464
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    Fairchild Semiconductor Corporation FQU1N60TU

    Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
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    Rochester Electronics FQU1N60TU 607 1
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    FQU1N60TU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD1N60 FQU1N60 FQU1N60TU O-251 FQU1N60 PDF