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    FQI5N60CTU Search Results

    FQI5N60CTU Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQI5N60CTU
    		Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF 633.27KB 9
    FQI5N60CTU
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4.5A I2PAK Original PDF 8
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    onsemi FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Tube 1,000
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    Verical () FQI5N60CTU 21,350 298
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    FQI5N60CTU 13,000 298
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    FQI5N60CTU 980 298
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    Rochester Electronics FQI5N60CTU 3,123 1
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    TME FQI5N60CTU 1
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    Flip Electronics FQI5N60CTU 4,000
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    Rochester Electronics LLC FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Bulk 286
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    FLIP ELECTRONICS FQI5N60CTU

    MOSFET N-CH 600V 4.5A I2PAK
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    DigiKey FQI5N60CTU Tube 700
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    Fairchild Semiconductor Corporation FQI5N60CTU

    Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics FQI5N60CTU 35,688 1
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    FQI5N60CTU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQI5N60C N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Ω Features Description • 4.5 A, 600 V, RDS on = 2.5 Ω (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		FQI5N60C PDF

    DATE CODE FAIRCHILD

    Contextual Info: TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB5N60C FQI5N60C FQI5N60C FQI5N60CTU DATE CODE FAIRCHILD PDF