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    FQE10N20CTU Search Results

    FQE10N20CTU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQE10N20CTU
    		Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF 639.92KB 8
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    FQE10N20CTU Price and Stock

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    Rochester Electronics LLC FQE10N20CTU

    MOSFET N-CH 200V 4A TO126-3
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    DigiKey FQE10N20CTU Tube 950
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    onsemi FQE10N20CTU

    MOSFET N-CH 200V 4A TO126-3
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    DigiKey FQE10N20CTU Tube 1,920
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    Verical FQE10N20CTU 19,620 1,190
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    Fairchild Semiconductor Corporation FQE10N20CTU

    Power Field-Effect Transistor, 4A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics FQE10N20CTU 20,419 1
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    FQE10N20CTU Datasheets Context Search

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    FQE10N20CTU

    Contextual Info: FQE10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQE10N20C FQE10N20C FQE10N20CTU PDF