FQB9N50CTM Search Results
FQB9N50CTM Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FQB9N50CTM |
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 9A D2PAK | Original | 8 | |||
| FQB9N50CTM |
|
500V N-Channel Advance Q-FET C-Series | Original | 620.51KB | 9 |
FQB9N50CTM Price and Stock
onsemi
onsemi FQB9N50CTMMOSFET N-CH 500V 9A D2PAK |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
FQB9N50CTM | Tape & Reel |
|
Buy Now | |||||||
FQB9N50CTM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TM FQB9N50C/FQI9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
Original |
FQB9N50C/FQI9N50C FQB9N50C FQB9N50CTM | |
|
Contextual Info: FQB9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 mΩ Features Description • 9 A, 500 V, RDS on = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced |
Original |
FQB9N50C |