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    FQB9N25CTM Search Results

    FQB9N25CTM Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQB9N25CTM
    		Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series Original PDF 885.76KB 9
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    FQB9N25CTM Price and Stock

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    Rochester Electronics LLC FQB9N25CTM

    MOSFET N-CH 250V 8.8A D2PAK
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    DigiKey FQB9N25CTM Bulk 371
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    onsemi FQB9N25CTM

    FQB9N25CTM
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    Verical () FQB9N25CTM 1,611 385
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    FQB9N25CTM 1,070 385
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    Fairchild Semiconductor Corporation FQB9N25CTM

    Power Field-Effect Transistor, 8.8A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    Rochester Electronics FQB9N25CTM 3,222 1
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    FQB9N25CTM Datasheets Context Search

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    Contextual Info: FQB9N25C/FQI9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB9N25C/FQI9N25C FQB9N25C FQB9N25CTM PDF