FQB6N90 Search Results

FQB6N90 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FQB6N90		Fairchild Semiconductor	900 V N-Channel MOSFET	Original	PDF	609.06KB	9
FQB6N90		Fairchild Semiconductor	QFET N-CHANNEL	Scan	PDF	387.9KB	8
FQB6N90TM		Fairchild Semiconductor	900V N-Channel QFET	Original	PDF	609.06KB	9
FQB6N90TM_AM002		Fairchild Semiconductor	900V N-Channel QFET	Original	PDF	609.06KB	9

FQB6N90 Price and Stock

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onsemi FQB6N90TM_AM002 MOSFET N-CH 900V 5.8A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQB6N90TM_AM002	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FQB6N90TM_AM002	Reel			800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FQB6N90TM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FQB6N90TM		1,328			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	FQB6N90TM		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others FQB6N90TM AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	FQB6N90TM		46,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FQB6N90 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: QFET N-CHANNEL FQB6N90, FQI6N90 FEATURES BVDSS = 900V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.	Original	FQB6N90, FQI6N90 FQB6N90	PDF
Contextual Info: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize	Original	FQB6N90 FQI6N90 FQB6N90TM O-263	PDF
Contextual Info: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize	Original	FQB6N90 FQI6N90 FQI6N90TU O-262 FQI6N90	PDF
Contextual Info: QFET N-CHANNEL FQB6N90, FQI6N90 FEATURES BVDSS = 900V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.	OCR Scan	FQB6N90, FQI6N90 D2PAK/TO-263 D2PAK/TO-263	PDF
FQB6N90 Abstract: FQI6N90 Contextual Info: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize	Original	FQB6N90 FQI6N90 FQI6N90	PDF
FQB6N90 Abstract: FQI6N90 Contextual Info: QFET N-CHANNEL FQB6N90, FQI6N90 FEATURES BV qss = 900V Advanced New Design R DS ON = 1 -9 i2 Avalanche Rugged Technology lD = 5.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 40nC (Typ.)	OCR Scan	FQB6N90, FQI6N90 D2PAK/TO-263 PAK/TO-263 FQB6N90 FQI6N90	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
FQB27N25 Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L Contextual Info: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035	Original	O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L	PDF
SSP6N60A Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A	PDF