FQB6N80TM Search Results
FQB6N80TM Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FQB6N80TM |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 5.8A D2PAK | Original | 8 | |||
FQB6N80TM |
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800V N-Channel QFET | Original | 698.2KB | 9 |
FQB6N80TM Price and Stock
onsemi FQB6N80TMMOSFET N-CH 800V 5.8A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQB6N80TM | Reel |
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FQB6N80TM | Reel | 800 |
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FQB6N80TM | 11,200 |
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Fairchild Semiconductor Corporation FQB6N80TMTransistors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQB6N80TM | 216 |
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FQB6N80TM | 6,600 |
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FQB6N80TM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQB6N80 N-Channel QFET MOSFET 800 V, 5.8 A, 1.95 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state |
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FQB6N80 | |
Contextual Info: FQB6N80 / FQI6N80 September 2000 QFET TM FQB6N80 / FQI6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQB6N80 FQI6N80 FQB6N80TM O-263 |