FQA11N90C_F109 Search Results
FQA11N90C_F109 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| SNJ54F109FK |
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Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 20-LCCC -55 to 125 |
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| SNJ54F109W |
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Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 16-CFP -55 to 125 |
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| SNJ54F109J |
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Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 16-CDIP -55 to 125 |
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| SN74F109DR |
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Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 |
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| SN74F109N |
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Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 |
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FQA11N90C_F109 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| FQA11N90C_F109 |
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900V N-Channel MOSFET | Original | 839.22KB | 8 | ||
| FQA11N90C-F109 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11A TO-3P | Original | 1.18MB |
FQA11N90C_F109 Price and Stock
FLIP ELECTRONICS FQA11N90C-F109MOSFET N-CH 900V 11A TO3P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQA11N90C-F109 | Tube | 140 |
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onsemi FQA11N90C-F109MOSFET N-CH 900V 11A TO3P |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQA11N90C-F109 | Tube |
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FQA11N90C-F109 | Tube | 184 |
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FQA11N90C-F109 | Bulk | 450 |
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FQA11N90C-F109 | 1,338 |
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FQA11N90C-F109 | 524 |
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Fairchild Semiconductor Corporation FQA11N90C_F109 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FQA11N90C_F109 | 4 |
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FQA11N90C_F109 | 712 |
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FQA11N90C_F109 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 60 nC) produced using Fairchild Semiconductor’s proprietary planar |
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FQA11N90C | |
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Contextual Info: QFET FQA11N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQA11N90C | |
F109
Abstract: FQA11N90C FQA11N90C_F109
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FQA11N90C F109 FQA11N90C_F109 | |
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Contextual Info: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11.0 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe |
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FQA11N90C | |
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Contextual Info: FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ω Features Description • 11 A, 900 V, RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar |
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FQA11N90C | |
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Contextual Info: QFET FQA11N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQA11N90C | |
FQA11N90C
Abstract: F109 FQA11N90C_F109
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FQA11N90C FQA11N90C F109 FQA11N90C_F109 |