FQA11N90_F109 Search Results

FQA11N90_F109 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
SNJ54F109FK		Texas Instruments	Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 20-LCCC -55 to 125
SN74F109N		Texas Instruments	Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70
SNJ54F109W		Texas Instruments	Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 16-CFP -55 to 125
SNJ54F109J		Texas Instruments	Dual J-K Positive-Edge-Triggered Flip-Flops W/Clear And Preset 16-CDIP -55 to 125
SN74F109DR		Texas Instruments	Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70

FQA11N90_F109 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FQA11N90_F109		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 11.4A TO-3P	Original	PDF		8
FQA11N90_F109		Fairchild Semiconductor	900V N-Channel MOSFET	Original	PDF	844.22KB	9
FQA11N90-F109		ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 11.4A TO-3P	Original	PDF	1.18MB

FQA11N90_F109 Price and Stock

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onsemi FQA11N90-F109 MOSFET N-CH 900V 11.4A TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQA11N90-F109	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FQA11N90-F109	Tube			450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics ()	FQA11N90-F109					1 $5.83 10 $4.41 100 $3.57 1000 $3.57 10000 $3.57	Get Quote
	FQA11N90-F109					1 - 10 - 100 - 1000 $2.72 10000 $2.72	Get Quote
Avnet Silica	FQA11N90-F109			9 Weeks	900	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FQA11N90-F109			9 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Vyrian	FQA11N90-F109		9,708			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FQA11N90_F109 Transistors
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	FQA11N90_F109		8,404			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FQA11N90_F109 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description • 11.4 A, 900 V, RDS on = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A This N-Channel enhancement mode power MOSFET is • Low Gate Charge (Typ. 72 nC) stripe and DMOS technology. This advanced MOSFET	Original	FQA11N90	PDF
FQA11N90 Abstract: FQA11N90_F109 F109 Contextual Info: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQA11N90 FQA11N90_F109 F109	PDF
Contextual Info: FQA11N90 / FQA11N90_F109 N-Channel QFET MOSFET 900 V, 11.4 A, 960 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state	Original	FQA11N90	PDF
Contextual Info: QFET FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQA11N90	PDF
F109 Abstract: FQA11N90 Contextual Info: QFET FQA11N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQA11N90 FQA11N90 F109	PDF