FP750SOT343 Search Results

FP750SOT343

Abstract: MIL-HDBK-263
Contextual Info: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 33 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS

FP750SOT343

Abstract: MIL-HDBK-263
Contextual Info: PRELIMINARY DATA SHEET FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 38 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS

EB750SOT343BA

Abstract: FP750SOT343
Contextual Info: EB750SOT343BA FP750SOT343 1.85GHz LNA EVALUATION BOARD FEATURES • • • • • 19 dBm Output Power 17 dB Small Signal Gain 0.8 dB Noise Figure 37 dBm IP3 Bias 3.3V, 110mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

Contextual Info: FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 38 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

Contextual Info: FP750SOT343 PACKAGED LOW NOISE, MEDIUM POWER PHEMT • • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 21 dBm P-1dB 2 GHz ♦ 17 dB Power Gain at 2 GHz ♦ 35 dBm IP3 at 2 GHz ♦ 45% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility