FOUR DARLINGTON ARRAYS Search Results

TD62318AFG

Abstract: TD62318APG arrays 5 transistor dip.16
Contextual Info: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages

TD62318AFG

Abstract: TD62318APG arrays 5 transistor dip.16
Contextual Info: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages

Contextual Info: TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP,TD62318AF 4CH LOW INPUT ACTIVE HIGH−CURRENT DARLINGTON SINK DRIVER The TD62318AP and TD62318AF are non-inverting transistor arrays which are comprised of four NPN darlington output stages

Contextual Info: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages

Contextual Info: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages

HSOP16

Abstract: TD62318AF TD62318AP
Contextual Info: TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP,TD62318AF 4CH LOW INPUT ACTIVE HIGH−CURRENT DARLINGTON SINK DRIVER The TD62318AP and TD62318AF are non-inverting transistor arrays which are comprised of four NPN darlington output stages

HSOP16

Abstract: TD62318AF TD62318AP
Contextual Info: TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP,TD62318AF 4CH LOW INPUT ACTIVE HIGH−CURRENT DARLINGTON SINK DRIVER The TD62318AP and TD62318AF are non-inverting transistor arrays which are comprised of four NPN darlington output stages

TD62318AFG

Abstract: TD62318APG
Contextual Info: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages

Contextual Info: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages

M54661P

Abstract: 89COM M54661FP 8 pin 4v power supply ic pnp 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54661P and M54661FP are four-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor

M54532P

Abstract: M54532FP common collector npn array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

M54532P

Abstract: M54532FP
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

pnp darlington array

Abstract: pnp DARLINGTON TRANSISTOR ARRAY transistor array pnp M54567FP M54567P pnp 8 transistor array 8 pin 4v power supply ic npn darlington array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely

AN5296 Application note CA3018

Abstract: AN5296 Application of the CA3018 Integrated AN5296 Application of the CA3018 an5296 Harris CA3018 CA3018 CA3018A AN5296 application note an5296 ca3018 Darlington pair IC
Contextual Info: CA3018, CA3018A January 1999 File Number 338.5 GeneraI Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington

pnp 8 transistor array

Abstract: M54567FP M54567P DARLINGTON TRANSISTOR ARRAY
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely

Contextual Info: 7 t}T7D7b DD1SDS3 74T Ordering number: EN 3298 LB1730 No.3298 Monolithic Digital IC SAiYO i High-Voltage, High-Current, _ Darlington Driver F u n c tio n s a n d F e a tu re s • Four independent high-voltage 85V , high-current (1.5A) Darlington driver

ULQ2003B

Contextual Info: S G S-TH O U SO N Q7E Kv M T ^ULQ2003R g g rc l u ÜLQ20Q4R Ì D | O D 1 1 3 T fl 7 | 67c i7093 ° T- ^ s LINEAR INTEGRATED CIRCUITS DARLINGTON ARRAYS • S EV EN D A RLIN G TO N S PER PAC KA GE The four versions interface to all common logic families. • OUTPUT C U R R EN T 500mA P ER D R IV E R

CA3018

Abstract: an5296 CA3018A AN5296 Application note CA3018 "an5296 Application of the CA3018" AN5296 Application of the CA3018 an5296 ca3018 Darlington pair Darlington pair IC AN5296 Application of the CA3018 Integrated
Contextual Info: CA3018 S E M I C O N D U C T O R General Purpose Transistor Arrays March 1993 Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate.

AN5296 Application note CA3018

Abstract: CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 CA3018A AN5296 Application of the CA3018 Integrated
Contextual Info: S E M I C O N D U C T O R CA3018, CA3018A NS EW DESIG FOR N MENDED OM November 1996 NOT REC General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp darlington array PNP DARLINGTON ARRAYS pnp 8 transistor array high hfe transistor darlington array pnp sta471a sib1044d STA434A transistor array
Contextual Info: Surface Mount Transistor Arrays SD Series Type No. Equivalent Circuit 2 R1 R2 SDA01 4 1 6 3 15,16 7 11,12 R1 : 4kΩtyp SDC01 13,14 11,12 3 5 7 2 4 15,16 1 –60 –1.5 (–2.5A pulse) 2000 to 12000 –1.4 max PNP darlington transistor array (Surface mount type of STA472A)

AN5296 Application note CA3018

Abstract: CA3016 CA3018 12 Pin Metal Can CA3018A an5296 ca3018 an5296 AN5296 application note
Contextual Info: -GA3018, CA3018A lîC T Général Purpose Transistor Arrays November 1996 Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.

TRANSISTOR 642

Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
Contextual Info: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general

D 1413 transistor

Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
Contextual Info: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10