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    FOR SECOND TEAR Search Results

    FOR SECOND TEAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD80C187-12/B
    		Rochester Electronics LLC 80C187 - Math Coprocessor for 80C186 PDF Buy
    MD80C187-10/B
    		Rochester Electronics LLC 80C187 - Math Coprocessor for 80C186 PDF Buy
    MD8284A/B
    		Rochester Electronics LLC 8284A - Clock Generator and Driver for 8066, 8088 Processors PDF Buy
    AM79C961AVI
    		Rochester Electronics LLC Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless PDF Buy
    AM79C961AVC\\W
    		Rochester Electronics LLC Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless PDF Buy

    FOR SECOND TEAR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020 PDF

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N PDF

    Contextual Info: in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 5 Second Typical ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Typical Chip-Program ■ Single High Voltage for Writing and Erasing


    OCR Scan     		1024K M28F010 ER-20, ER-24, 28F010 RR-60, AP-316, PDF

    intel 28F010

    Abstract: N28F010-120 28F010 80C186 E28F010
    Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for


    OCR Scan     		28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010 PDF

    28F010

    Abstract: M28F010 M28F010-12 M28F010-90 M80C186
    Contextual Info: M28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption


    Original     		M28F010 1024K M28F010 ER-20 ER-24 28F010 M28F010-12 M28F010-90 M80C186 PDF

    Contextual Info: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller


    OCR Scan     		28F256A ER-20, ER-24, RR-60, AP-316, AP-325, PDF

    Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for


    OCR Scan     		28F020 2048K AP-325 -80V05, -80V05 28F020 PDF

    intel 28f512

    Abstract: 28F512 80C166 80C186 P28F512
    Contextual Info: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ Command Register Architecture for


    OCR Scan     		28F512 intel 28f512 28F512 80C166 80C186 P28F512 PDF

    N28F512-200

    Abstract: P28F512-200 28F512-150 29020 28f512-200
    Contextual Info: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		28F512 28F512 P28F512-120 P28F512-150 P28F512-200 32-PIN 32-LEAD N28F512-120 N28F512-150 N28F512-200 N28F512-200 P28F512-200 28F512-150 29020 28f512-200 PDF

    Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325 PDF

    Contextual Info: in te i A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to +125°C Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase


    OCR Scan     		A28F256A 32-Lead A28F256A AP28F256A-120 AP28F256A-150 AN28F256A-150 AP-316, PDF

    28F010-120

    Abstract: 28f010
    Contextual Info: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120 PDF

    P28F256A-150

    Abstract: F256A intel 28f256a
    Contextual Info: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Qulck-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		28F256A 32-LEAD P28F256A-120 P28F256A-150 F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, P28F256A-150 F256A intel 28f256a PDF

    Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for


    OCR Scan     		A28F010 1024K 32-LE AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316, PDF

    tegra t30

    Contextual Info: ¡n tg l 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 ¡j,s Typical Byte-Program


    OCR Scan     		1024K 28F010 AP-325 28F010-65 28F010-90 405bl tegra t30 PDF

    28F256A200

    Abstract: order 231369 29024
    Contextual Info: « y « « in t e i 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P ro g ra m m in g T M Algorithm


    OCR Scan     		28F256A 28F256A 32-PIN 32-LEAD N28F256A-120 N28F256A-150 N28F256A-200 P28F256A-120 P2BF256A-150 P28F256A-200 28F256A200 order 231369 29024 PDF

    Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program


    OCR Scan     		28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28, PDF

    271111

    Contextual Info: in te i P ftiO M flN A H V M28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m in g Algorithm


    OCR Scan     		M28F010 1024K M28F010 271111 PDF

    7805H

    Abstract: epson dot matrix printer TL7702ACP
    Contextual Info: Issued March 1999 232-3872 Data Pack F Panel printer Data Sheet RS stock no. 260-139 Specifications Standard Number of columns 24 Print speed lines per second - typical 0.7 Character set (mm) - W ϫ H 1.7 ϫ 2.4 Dots per line (graphics) 144 5 ϫ 7 (5 ϫ 8 for


    Original     		100mA 7805H epson dot matrix printer TL7702ACP PDF

    CRC16

    Abstract: CRC-16 DS1920 DS1921 DS1971 DS1990 DS1991 DS2480B DS2482 DS2490
    Contextual Info: Maxim > App Notes > 1-Wire Devices Keywords: iButton, 1-Wire, OneWire, 1wire, ultra-reliable, communication, techniques, touch, contact, intermittent, tear Sep 22, 2008 APPLICATION NOTE 159 Software Methods to Achieve Robust 1-Wire® Communication in iButton® Applications


    Original     		DS1993: DS1995: DS1996: com/an159 AN159, APP159, Appnote159, CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990 DS1991 DS2480B DS2482 DS2490 PDF

    DS1991

    Abstract: DS2480B DS2482 DS2490 CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990
    Contextual Info: Maxim > App Notes > 1-Wire DEVICES Keywords: iButton, 1-Wire, OneWire, 1wire, ultra-reliable, communication, techniques, touch, contact, intermittent, tear Sep 22, 2008 Revised: Sep 22, 2008 APPLICATION NOTE 159 Software Methods to Achieve Robust 1-Wire® Communication in


    Original     		DS1973: DS1977: DS1982: DS1985: DS1986: DS1990A: DS1992: DS1993: DS1995: DS1996: DS1991 DS2480B DS2482 DS2490 CRC16 CRC-16 DS1920 DS1921 DS1971 DS1990 PDF

    Contextual Info: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R PROPERTY Color • Thermal conductivity: 1.5 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction


    Original     		1500R E1269 PDF

    ASTM d792

    Abstract: astm D150 conductivity meter circuit for second tear C351 D149 D150 D2240 D257 D374
    Contextual Info: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R • Thermal conductivity = 1.5 W/mK • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction


    Original     		1500R D2240 ASTM d792 astm D150 conductivity meter circuit for second tear C351 D149 D150 D2240 D257 D374 PDF

    Contextual Info: Gap Pad 1500R Thermally Conductive, Reinforced Gap Filling Material Features and Benefits TYPICAL PROPERTIES OF GAP PAD 1500R PROPERTY Color • Thermal conductivity: 1.5 W/m-K • Fiberglass reinforced for puncture, shear and tear resistance • Easy release construction


    Original     		1500R E1269 PDF