FOOTPRINT SO 14 Search Results

ntlms4504n

Contextual Info: NTLMS4504N Advance Information Power MOSFET 28 A, 24 V N–Channel SO–8 Leadless The SO–8LL Leadless package uses the power QFN package technology. It’s footprint matches that of the standard SO–8 single die device. This Leadless SO–8 package provides low parasitic

wave footprint so14

Abstract: MLC745 SOT163-1 SO-16 SOT109-1 footprint so 14 SOT136-1 sot109 SOJ40 SOT109-2
Contextual Info: SO & SOJ FOOTPRINT WAFE SOLDERING Philips Semiconductors enlarged solder land handbook, full pagewidth solder lands C 0.3 1.20 B solder resist A occupied area F board direction 0.60 1.27(N−2)x) MLC745 G Wave soldering PACKAGE NAME FOOTPRINT DIMENSIONS (mm)

Contextual Info: IRF7521D1 Description TM The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium.

Contextual Info: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After

SO8F

Abstract: 4108N SO8FL
Contextual Info: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After

Contextual Info: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After

4C03N

Contextual Info: NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL Features • • • • • • http://onsemi.com Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses

858P

Abstract: F63TNR FDR858P SOIC-16
Contextual Info: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little

Contextual Info: February 1999 FDR858P Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little

ic 4800 for laptop motherboard

Abstract: B03005 2.4ghz av transmitter module QOQWT11 Radio Frequency controlled toy car circuit bluetooth pinout RS232 Remote Control Toy Car so simple TRANSMITTER IC 74HC123 LQW15AN10NJ00 MAX232
Contextual Info: Difference between old stock number 5327473 and new stock number (133844) is: New module has a smaller footprint LinkMatik 2.0 TM FlexiPanel Bluetooth 2.0 serial / audio transceiver with auto-connect modes and command interface DIL SO Vss Vdd Reset DNC DNC

91802A

Abstract: IRF7353D1
Contextual Info: PD- 91802A IRF7353D1 FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode ● Ideal For Buck Regulator Applications ● N-Channel HEXFET ● Low VF Schottky Rectifier ● Generation 5 Technology ● SO-8 Footprint Description

4C03N

Abstract: NVMFS4C03NT3G
Contextual Info: NVMFS4C03N, NVMFS4C03NWF Power MOSFET 30 V, 2.1 mW, 143 A, Single N−Channel Logic Level, SO−8FL http://onsemi.com Features • • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses

Contextual Info: C sO SURFACE MOUNT LED LAMP Super Bright 1206 CHIP TYPE - Round Top OPTÖELECTRIIICS Super Bright Blue QTLP652C-B Water Clear PACKAGE DIMENSIONS .126(3.2) DESCRIPTION —► This surface mount lamp is designed to fit industry standard profile and footprint

PHM25NQ10T

Abstract: MGX371
Contextual Info: PHM25NQ10T TrenchMOS standard level FET Rev. 03 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO-8 footprint compatible

PHM30NQ10T

Contextual Info: PHM30NQ10T TrenchMOS standard level FET Rev. 02 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO-8 footprint compatible

P65 MOSFET

Abstract: IRF7353D2
Contextual Info: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint

PHM15NQ20T

Contextual Info: PHM15NQ20T TrenchMOS standard level FET Rev. 03 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO-8 footprint compatible

Pacific Monolithics

Contextual Info: PACIFIC PM2107 MONOLITHICS DATASHEET PRELIMINARY RFIC Power Amplifier 2400 to 2500 MHz Operation Features • • • • • • 30 dBm Output Power 45% Efficiency N E W 10 Pin PM-SOP Package Low Profile, PCMCIA Type II Compatible Small Size H alf the Footprint of SO-14

10.00 ju

Abstract: IRF7422D2
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1412 IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications Generation V Technology SO-8 Footprint A A S G 1 8

IRF7326D2

Abstract: IRF7101
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

Contextual Info: NTMFS4C01N Advance Information Power MOSFET 30 V, 0.9 mW, 305 A, Single N−Channel, SO−8FL http://onsemi.com Features • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses

smd CODE 3Gs

Abstract: smd diode schottky code marking 2F SMD DIODE marking AB Schottky
Contextual Info: International IOR Rectifier pd-9.mi2b IRF7422D2 PRELIMINARY FETKY M OSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation 5 T echnology • SO-8 Footprint Vdss = -20V R DS on =

5M MARKING CODE SCHOTTKY DIODE

Abstract: smd diode schottky code marking 2F fld pcb diode schottky 117c
Contextual Info: International IOR Rectifier pd-9.mhe IR F 74 21D 1 preliminary FETKY MOSFET andf Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint • • • VDSS = 30V

Contextual Info: NVMFD5853N, NVMFD5853NWF Power MOSFET 40 V, 10 mW, 53 A, Dual N−Channel, Dual SO−8FL Features • • • • • • http://onsemi.com Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses