FOOTPRINT DCK Search Results

Contextual Info: Competitive Package Cross-Reference: NXP Logic Products Package Image width x length x height mm Pitch (mm) NXP 0.5 GX 0.3 GN TI Fairchild ON Toshiba CMX fsV MicroPak 0.8 x 0.8 x 0.35 MicroPak 1.0 x 0.9 x 0.35 MicroPak GF FHX 0.35 1.0 x 1.0 x 0.5 GF 1.0 x 1.0 x 0.35 GS

SN74LVC1g

Abstract: Fairchild 1G125 SMD 5PIN LOGIC GATE 7404 ttl inverter 7404 not gate 1g125 sn74auc2g74 Dual Analog Switches p174stx1G SMD SINGLE GATE
Contextual Info: R E L I A B E. L L O G I C. I N N O V A T I O N. LITTLE LOGIC SELECTION GUIDE CBT DBV AHCT DCK CBTD CBTLV DBV DBV DCK DCK DBV AHC DBV DCK AUC DBV 5 LVC DBV(6) DCK(5) DCT DCK DBV(5) DCT DCK(5) YEA DCK(6) DCU YZA DBV(6) YEA DCK(6) DCU YZA (actual size of chip)

ball 128 mcp

Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
Contextual Info: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet

S72NS256PD0

Abstract: S72NS512PD0 S72NS-P S29NS-P S72NS128PD0
Contextual Info: S72NS-P Based MCPs/PoPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P Based MCPs/PoPs Cover Sheet

SN74LVC1G157

Abstract: SN74LVC1g P13A125 ti little logic land pattern for vsop 40 pins SN74LVC2G342 LVC2T45 NC7SZ112 1g125 high speed land pattern for vsop 60 pins
Contextual Info: R E L I A B L E. L O G I C. TM I N N O V A T I O N. LITTLE LOGIC SELECTION GUIDE CBT DBV AHCT DCK CBTD CBTLV DBV DBV DCK DCK AHC DBV DCK DBV AUC DBV 5 LVC DBV(6) DCK(5) DCT DCK DBV(5) DCT DCK(5) YEP DCK(6) DCU DBV(6) YEP YZP DCK(6) DCU YZP AUP DBV(5) DBV(6)

512MB NOR FLASH

Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

ssop-5 footprint

Abstract: SOT753 footprint sot59 us8 Package SOT353 footprint AN10161 MO178 SC70-5 SC74A SC88A
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.

SSOP5-P-0-65A

Abstract: AN10161 MO178 MO-203 SC59 SC70-5 SC74A SC88A philips naming convention philips package designator
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.

ssop-5 footprint

Abstract: AN10161 philips naming convention SSOP-5 0.65 sot59 MO178 MO-203 SSOP5-P-0-65A SC70-5 SC74A
Contextual Info: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

Spansion ddr

Abstract: S72NS512RE0AHGG0
Contextual Info: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

Contextual Info: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)

Q11A

Abstract: Q13A SSTU32864 SSTU32864EC
Contextual Info: SSTU32864 1.8 V configurable registered buffer for DDR2 RDIMM applications Rev. 01 — 12 July 2004 Objective data 1. Description The SSTU32864 is a 25-bit 1:1 or 14-bit 1:2 configurable registered buffer designed for 1.7 V to 1.9 V VDD operation. All clock and data inputs are compatible with the JEDEC standard to SSTL_18. The

DDR2 DIMM 240 pinout

Abstract: DDR2-667 Q11A Q13A SSTUA32864 SSTUA32864EC 96-ball
Contextual Info: SSTUA32864 1.8 V configurable registered buffer for DDR2-667 RDIMM applications Rev. 01 — 12 May 2005 Product data sheet 1. General description The SSTUA32864 is a 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer designed for 1.7 V to 2.0 V VDD operation.

S30MS-P

Abstract: AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF S75WS-P UtRAM Density Spansion NAND Flash DIE MS512P
Contextual Info: S75WS-P based MCP/POP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash NOR Interface S30MS-P (NAND Interface) ORNAND Flash pSRAM Type 2 S75WS-P based MCP/POP Products Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

DDR2-800

Abstract: Q11A SSTUB32866
Contextual Info: SSTUB32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications Rev. 02 — 9 October 2006 Product data sheet 1. General description The SSTUB32866 is a 1.8 V configurable register specifically designed for use on DDR2

DDR2-667

Abstract: Q11A SSTUA32866 SSTUA32866EC
Contextual Info: SSTUA32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-667 RDIMM applications Rev. 01 — 15 July 2005 Product data sheet 1. General description The SSTUA32866 is a 1.8 V configurable register specifically designed for use on DDR2

DDR2-800

Abstract: SSTUA32866 SSTUB32866 ic PRESSURE SENSOR
Contextual Info: SSTUP32866 1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity and programmable output for DDR2-800 RDIMMs Rev. 02 — 14 September 2006 Product data sheet 1. General description The SSTUP32866 is a 1.8 V configurable register specifically designed for use on DDR2

S98WS512

Contextual Info: S98WS512PE0FW005 Stacked Multi-chip Product MCP 512 Mbit (32M x 16-Bit) Stacked Burst Mode, Simultaneous Read/Write Flash Memory with 256 Mbit (16M x 16-bit) Mobile SDRAM on Shared Bus S98WS512PE0FW005 Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: General-purpose logic solutions Commitment and innovation Commitment and Innovation Over the last 50 years, the NXP logic business – starting as Philips Semiconductors and then incorporating the experience of Signetics – has supported growing global demand for logic. Today, as the No. 1

TRAY FBGA 11X13

Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Contextual Info: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

S29WS256P

Abstract: S29WS-P S73WS-P
Contextual Info: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: m u EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed O iF û l^ i T lû lM Static RAM Features The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array.