fmv12n50
Abstract: FMV12N50ES fmv12n50e
Contextual Info: FMV12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMV12N50ES
O-220F
fmv12n50
FMV12N50ES
fmv12n50e
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FMV12N50E
Abstract: fmv12n50
Contextual Info: FMV12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMV12N50E
O-220F
FMV12N50E
fmv12n50
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FMV12N60ES
Abstract: VCC60
Contextual Info: FMV12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMV12N60ES
O-220F
FMV12N60ES
VCC60
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Contextual Info: 3 Void Polyester Label Products FMV02 • FMV12 • FMV22 • FMV32 • FMV0E Technical Data February, 2007 Product Description 3M Void Polyester Label Products are tamper-indicating stocks designed to provide a “void” message in the facestock when removal is attempted. These void polyester
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FMV02
FMV12
FMV22
FMV32
P1410
P1410
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12N60ES
Abstract: FMV12N60ES 12N60E SC-25 zn 48 mosfet
Contextual Info: DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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Original
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FMV12N60ES
MS5F7202
H04-004-05
H04-004-03
12N60ES
FMV12N60ES
12N60E
SC-25
zn 48 mosfet
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FMV07N90E
Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Contextual Info: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)
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O-220
O-220F
FMH28N50ES
FMH23N50ES
FMH21N50ES
FMH280E
FMC06N80E
FMI09N70E
FMI07N70E
FMC09N70E
FMV07N90E
fmh*23N50E
FMP08N80E
FMV07N70E
FMV06N80E
FMC07N65E
FMV13N80E
D2PACK
FMI07N90E
FMV07N65E
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12N50E
Abstract: 12N50ES 12n50 reference table n mosfet FMV12N50E
Contextual Info: DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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Original
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FMV12N50ES
MS5F7221
H04-004-05
H04-004-03
12N50E
12N50ES
12n50
reference table n mosfet
FMV12N50E
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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