Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    FMC12N50E Search Results

    FMC12N50E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FMC12N50ES

    Contextual Info: FMC12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original     		fmc12n50es PDF

    FMC12N50E

    Contextual Info: FMC12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original     		fmc12n50e PDF

    12N50E

    Abstract: 12N50ES FMI12N50E Diode type SMD marking SJ Sj 07 DIODE SMD FUJI DATE CODE fmi12n50es and/sj 1408
    Contextual Info: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		fmi12n50esfmc12n50esfmb12n50esms5f7223+8h04-004-0312n50e12n50esfmi12n50ediode type smd marking sjsj 07 diode smdfuji date codeand/sj 1408 PDF

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Contextual Info: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


    Original     		o-220o-220ffmh28n50esfmh23n50es+16fmh21n50esfmh280efmc06n80efmi09n70efmi07n70efmc09n70efmv07n90efmh*23n50efmp08n80efmv07n70efmv06n80efmc07n65efmv13n80ed2packfmi07n90efmv07n65e PDF

    12N50E

    Abstract: gcu 101
    Contextual Info: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,


    Original     		ms5f6936fmi12n50efmc12n50eh04-004-05+3h04-004-0312n50egcu 101 PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		rh011h2007-10b120fismp2a5100ya868c12+8ya868c152sk4004yg865c10f5049diode 3a05diode smd sj 24diode smd sj 09diode smd sj 28 PDF