FMB29 Search Results

Contextual Info: s e Mit“ a noi -intoa > FMB2907A MMPQ2907A E2 B2 C1 / MMPQ2907A C2 w pin#1 B1 E1 pin#1 B1 SC70-6 SuperSOT -6 M ark: .2F Mark: .2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose am plifier and switch requiring

FFB2907A

Abstract: FMB2907A FMBT2907A MMPQ2907A SC70-6 SOIC-16
Contextual Info: FMB2907A FFB2907A E2 MMPQ2907A C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .2F Mark: .2F C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring

Contextual Info: FFB2907A / FMB2907A / MMPQ2907A FMB2907A FFB2907A E2 C2 B2 E1 C1 SC70-6 Mark: .2F MMPQ2907A C1 pin #1 E1 B1 E1 C2 pin #1 B1 E2 B2 E3 E4 B4 B2 SuperSOTä-6 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can

Contextual Info: FFB2907A / FMB2907A / MMPQ2907A PNP Multi-Chip General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. Sourced from Process 63. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2

FFB2907A

Abstract: FMB2907A MMPQ2907A SC70-6 SOIC-16
Contextual Info: R F M r.n M n i ir ^ n n E2 B2 . g É / FMBT2907A FMB2907A FFB2907A MMPQ2907A C2 | | l ^ E1 C1 p in #1 1 § I- / MMPQ2907A 111 C2 B1 B2 E2 E1 p in # 1 B1 SC70-6 SuperSOT -6 Mark: ,2F Mark: ,2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use a s a g e n e ra l p u rp o se a m p lifie r an d sw itch re q u irin g

BC847S

Abstract: BC857S FFB2222A FFB2227A FFB2907A FFB3904 FFB3906 FFB3946 MMPQ3904
Contextual Info: Discrete Small Signal Hybrid Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SC70 NPN Configuration FFB3904 40 60 6 0.2 100 300 1 10 0.3 50 5 FFB2222A 40 75 5 0.5 100 300 10 150

fmbg19l

Abstract: SFPB-69 FMB-G19L FMB-29 FMB-29L FMB-39 FMB-39M FME-220A FME-230A MPE-29G
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot IR (H) (mA) VR = VRM max Ta (°C)

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

fmbg19l

Abstract: FMB-39M
Contextual Info: Schottky Barrier Diodes 90V Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter VRM （V） Type No. I F（ AV） （A） FMB-G19L IFSM （A） 50Hz Half-cycle Sinewave Single Shot 4.0 5.0 35 50 2.0 3.0 15 4.0 5.0 35 7.5 10.0 50 10.0

CTB24L

Abstract: ctb34m
Contextual Info: 5-5. Schottky Barrier Diodes Surface Mount Type Type No. SFPA-51 VRM IF AV IFSM (V) (A) (A) 10 Tj Tstg (°C) 60 Electrical Characteristics VF (V) IR H•IR Condition (mA) (mA) Fig. = IF Ta = 100°C No. max per max per max per element element element 0.34

Contextual Info: 4-4 Schottky Barrier Diodes Low IR “E Series” ●Surface-Mount V RM V 40 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (mA) V R=VRM max IR(H) (mA) VR=V RM

Schottky Barrier Diodes

Abstract: ek 1036 FMB29L
Contextual Info: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W)

FMB-29

Abstract: FMB-29L FMB-39 FMB-39M FMB-G19L FME-220A FME-230A MPE-29G SFPB-59 SFPB-69
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) IR (H) (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot VR = VRM max Ta (°C)

STR-H2003

Abstract: STR-H2022 Sanken STR-H2022 STR-H2005 SEC165P2-24 seb80n2 led HG 740 nm STRH2022 SEB80N2-24 SEB100P2
Contextual Info: より明るく薄く、高効率に サンケン の ディスプレイ トータル ~CCFL（冷陰極蛍光放電管）からデバイス、 インバータ、電源モジュールまで∼ より大きく、明るく、そして鮮やかに、と日々進化するＴＶやモニタなどの液晶ディス

sjpa-l3

Contextual Info: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

fmba0656

Contextual Info: Section 4 Multi-Chip Transistors FMB100 NPN GPA . 4-3 FMB200 PNP GPA . 4-6

RBA-406B

Abstract: CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER
Contextual Info: SANKEN ELECTRIC CO LTD 3SE 5 Schottky Barrier Diodes m 7 ^ 0 7 4 1 0000fl21 «= ^ S A K J ^ ; £ | : g | E3Vrm: 3 0 — 9 0 V E lo : 0 .7 ~ 3 0 A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 A K 03 A K 04 A K 06 A K 09

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

FMB-29

Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-29 1. Scope The present specifications shall apply to an FMB-29. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040512 1／5