FM30 Search Results

Contextual Info: Formosa MS Chip General Purpose Rectifiers FM301-B THRU FM307-B List List. 1 Package outline. 2

DIODE A34

Abstract: DIODE marking code A34 A37 diode A35 diode marking codes A32 FM301 FM302 FM303 FM304 FM305
Contextual Info: Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.

Contextual Info: FM30C256 256Kb Data Collector Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Formosa MS Chip General Purpose Rectifiers FM301 THRU FM308 List List. 1 Package outline. 2

crystal oscillator in microcontroller

Abstract: 512Hz 6pf 32khz crystal oscillator AN402 AN-402 FM30C256 FM3808
Contextual Info: AN-402 RTC Oscillator Guide For FM31xx, FM3808, and FM30C256 Overview The FM31xx, FM3808, and FM30C256 are Integrated Processor Companion devices that feature nonvolatile FRAM memory and a real-time clock or RTC. The RTC operates on VDD power and switches

FM30C256

Abstract: FM30C256-S
Contextual Info: Errata for FM30C256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 001 rev. AA Date Jan. 9, 2002 Product Marking FM30C256-S Recent testing has identified a problem with the 256Kb FRAM Data Collector. 1) Problem:

Contextual Info: FM301 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM307 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current

FM300-108

Abstract: FM Amplifier 300w FM300 300w fm amplifier H101X 300w rf amplifier RF GAIN LTD
Contextual Info: FM300-108 300 W - FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 - 108 MHz 48 Volts Input/Output 50 Ω

Contextual Info: FM301L THRU FM307L SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: FM30C256 256Kb Data Collector Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM50DY-10

Abstract: FM50DY-10S FM75HA-10 FM50DY-9 FM75HA FM300Y-9 fm50DY
Contextual Info: •M O SF E T MODULES M ax. ratings Electrical characteristics MOSFET section Type No. FM15BF-6 FM30TF-10S FM300Y-9, 10 FM50DY-9, 10 FM50DY-10S FM5ÖDZ-9 FM50DZ- tOS FM75HA-10 FM10OHY-9, 10 Kodeseetion Voss •b Po Té, V M m fc ) MOSFET section !A]- ros

DIODE A34

Abstract: A37 diode DIODE marking code A34 A35 diode a35 marking code marking codes A32 FM301 FM302 FM303 FM304
Contextual Info: Formosa MS Chip Silicon Rectifier FM301 THRU FM307 Glass passivated type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.276 7.0 0.260(6.6) For surface mounted applications.

FM30C256

Abstract: rtc tamper FM30C256-S MS-013
Contextual Info: FM30C256 256Kb Data Collector Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM301 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM307 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current

FM30C256-g

Abstract: FM30C256 FM30C256-S MS-013 RAM 8464
Contextual Info: FM30C256 256Kb Data Collector Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM306

Abstract: FM301 FM302 FM303 FM304 FM305 FM307
Contextual Info: FM301 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM307 SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current

Contextual Info: FM301B RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM307B SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current

Contextual Info: FM301L THRU FM307L SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

BLF278 equivalent

Abstract: an power amplifier 108 mhz blf278 108 amplifier FM301-108 BLF278 power amplifier blf278 300w amplifier 300w fm amplifier SOCKET HEAD CAP SCREWS application MOSFET transmitters fm
Contextual Info: FM301-108 PRELIMINARY 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω

MARKING CODE 3B3

Contextual Info: FM301% THRU FM307% 3.0 Amp Glass Passivated Silicon Rectifiers - 50~1000Volts SMB Package SMB DO-214AA Features Glass Passivated Chip I d e a l f o r s u r f a c e m o un t e d a p p l i c a t i o n s Low leakage current Metallurgic ally bonded construction

FM30C256-S

Abstract: FM30C256 MS-013
Contextual Info: Product Preview FM30C256 256Kb Data Collector Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Billion 1011 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

mitsubishi MOSFET

Abstract: FM30TF-10S fm30tf "MOSFET Module" full bridge inverter
Contextual Info: MITSUBISHI MOSFET MODULE FM30TF-1 OS MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING Dim ensions in mm F M 3 0 T F -10 S _ 7.5 _ 2 '. 7.5 19! . ! I 1 I 28.5 I 21 _ 7.5 16. 5 , I 28.5 11 I M 2 - ip 5.5 21.5 11 / '5 3 :3 1 1 c o l § i- _ l T L+ 98

Contextual Info: Chip General Purpose Rectifiers Formosa MS FM301-BS THRU FM307-BS List List. 1 Package outline. 2

Contextual Info: FM30C256 256Kb Data Collector Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process