FM16 Search Results

Contextual Info: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

FM16W08

Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

KS0070B

Abstract: FM162A
Contextual Info: Tovics Technology Corporation Standard Character LCD Module Feature 1. 2. 3. 4. 5. 6. FM162A Picture Information Display Format 16 x 2 8-Bit parallel bus interface Built-in LCD controller Wide operating temperature range ( Option ) High contrast ratio and wide viewing angle

Fenghua

Abstract: vr-10k FM162B KS0070B LCD Character Controller
Contextual Info: Tovics Technology Corporation Standard Character LCD Module Feature 1. 2. 3. 4. 5. 6. FM162B Picture Information Display Format 16 x 2 8-Bit parallel bus interface Built-in LCD controller Wide operating temperature range ( Option ) High contrast ratio and wide viewing angle

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM150L

Abstract: FM160L SS15 SS16 DIODE marking code SS15
Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.

"Ferroelectric RAM"

Abstract: FM1608S ferroelectric ram RAMTRON
Contextual Info: FM1608S FRAM Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation

FM1608B-SG

Abstract: AEC-Q100-002 MS-013 FM1608B
Contextual Info: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1608

Abstract: FM1608-120-PG MS-013 FM1608-120-S
Contextual Info: FM1608 64Kb Bytewide F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120-N THRU FM160-N Silicon epitaxial planer type Features SOD-323 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.106 2.7 0.091 (2.3)

FM161A

Abstract: KS0066 LCD Character Controller
Contextual Info: Tovics Technology Corporation Standard Character LCD Module Feature FM161A Picture Information 1. 2. 3. 4. Display Format 16 x 1 8-Bit parallel bus interface Built-in LCD controller Wide operating temperature range ( Option ) 5. High contrast ratio and wide viewing angle

Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay write • Advanced high-reliability ferroelectric process

Contextual Info: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM16W08

Abstract: FM16W08-SG AEC-Q100-002 MS-013
Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM120 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM160 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability

FM1608

Abstract: FM1608-120-P FM1608-120-S
Contextual Info: FM1608 R aM TR O N 64Kb Bytewide F RAM Memory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • Organized as 8,192 x 8 bits • High endurance 10 Billion 10 10 read/writes • 10 year data retention at 85° C • NoDelay write

FM1608

Abstract: FM1608-120-P FM1608-120-S MS-011 MS-013
Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

FM1608-120-SG

Abstract: fm1608-120-pg FM1608 MS-013 M071 FM1608-120SG fm1608-120pg
Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

ram DS1225

Abstract: DS1225 related circuit of 74HC138 74HC138 FR-H1
Contextual Info: Replacing A Dallas Semiconductor DS1225 With FRAM Memory F ^ 3 M T R O f \J iia u s ! 'in \ » ‘n il active and onK K Op\ w h c i ; standby n o d e I n' small ba tte n -p o w e re d systems. this difference can R am tron's FM1608S 8 k xX ferroelei i a r.ii'dum .:i, css T e n io n

FM1608B-PG

Contextual Info: FM1608B PDIP 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention @ +75 C NoDelay Writes Advanced High-Reliability Ferroelectric Process