FM1 Search Results

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM1020-T1 THRU FM1040-T1 Silicon epitaxial planer type Features SMC-T1 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.272 6.9 0.248(6.3)

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120-S THRU FM1100-S Silicon epitaxial planer type Features SMA-S Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier FM120-M THRU FM1200-M List List. 1 Package outline. 2

Contextual Info: Chip Schottky Barrier Rectifier FM120-MT THRU FM1200-MT Formosa MS List List. 1 Package outline. 2

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type SMA Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.

Contextual Info: Chip Schottky Barrier Rectifier FM120-MH THRU FM1200-MH Formosa MS List List. 1 Package outline. 2

Contextual Info: Chip Schottky Barrier Rectifier FM120-MH THRU FM1200-MH Formosa MS List List. 1 Package outline. 2

Contextual Info: Spec. NO.:FM120-L~FM1100-L Issued Date:2007/12/11 Revised Date:2008/01/11 Page NO.:1/2 Formosa MS Chip Schottky Barrier Diodes FM120-L THRU FM1100-L Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame

Contextual Info: Formosa MS Chip Schottky Barrier Rectifier FM120-NS THRU FM140-NS List List. 1 Package outline. 2

Contextual Info: Chip Schottky Barrier Rectifier Formosa MS FM120-N THRU FM1100-N List List. 1 Package outline. 2

Contextual Info: Formosa MS SMD Schottky Barrier Rectifier FM10L45-T2 List List. 1 Package outline. 2

FM1702SL

Contextual Info: FM17XX Serial Contactless Readers ICS Datasheet Oct. 2007 Datasheet FM17 Serial Contactless Reader ICS Ver 0.2 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO

Contextual Info: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and

FM1808

Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

IN5008

Abstract: 2SK2705 SHE10
Contextual Info: 2SK2705 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS µA VDS = 450V, VGS = 0V VTH 2.0 3.0 Re (yfs) 6.0 9.0 75 (Tc = 25ºC) W RDS (on) 4.0 0.48 0.57 V VDS = 10V, I D = 1mA

2SK1181

Contextual Info: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V

FM1808

Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

110C

Abstract: FM1233D FM1233DD FM1233DE FM1233DF
Contextual Info: FM1233D 3-Pin µC Supervisor Circuit General Description Features The FM1233D is a supervisor circuit that monitors a microprocessor power supply or other system voltage and issues a reset pulse when a fault condition exists. Several different threshold voltages

FM1060-T1

Abstract: FM1080-T1 FM1010
Contextual Info: Formosa MS FM1020-T1 THRU FM10100-T1 Chip Schottky Barrier Rectifier List List. 1 Package outline. 2

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0603 Package Chip LED 0.8mm Height 19-21/G6C-FM1N2B/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow

marking 3bf

Contextual Info: FM1233B 3-Pin µC Supervisor Circuit General Description Features The FM1233B is a supervisor circuit that monitors a microprocessor power supply or other system voltage and issues a reset pulse when a fault condition exists. Several different threshold voltages

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

FM16W08

Contextual Info: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process