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    FLM4 Search Results

    FLM4 Datasheets (24)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLM4
    Littelfuse Fuse Original PDF 240.73KB 4
    FLM.400
    Littelfuse Fuse 0.4A 250V MIDGET Original PDF 32.51KB 1
    FLM4_10
    Littelfuse Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 4/10 A. Voltage rating: 250 VAC. Interrupting rating: AC: 10,000 A rms symmetrical. Original PDF 240.73KB 4
    FLM4-1_2
    Littelfuse Midget, time-delay fuse. Supplementary overcurrent protection. Ampere rating: 4-1/2 A. Voltage rating: 250 VAC. Interrupting rating: AC: 10,000 A rms symmetrical. Original PDF 240.73KB 4
    FLM4450-12D
    Unknown FET Data Book Scan PDF 102.63KB 2
    FLM4450-12F
    Eudyna Devices C-Band Internally Matched FET Original PDF 301.32KB 4
    FLM4450-12F
    Fujitsu C-Band Internally Matched FET Original PDF 115.24KB 4
    FLM4450-14/D
    Unknown FET Data Book Scan PDF 102.64KB 2
    FLM4450-18F
    Eudyna Devices C-Band Internally Matched FET Original PDF 300.67KB 4
    FLM4450-18F
    Fujitsu C-Band Internally Matched FET Original PDF 96.7KB 4
    FLM4450-25D
    Unknown FET Data Book Scan PDF 102.64KB 2
    FLM4450-25F
    Eudyna Devices C-Band Internally Matched FET Original PDF 300.84KB 4
    FLM4450-25F
    Fujitsu C-Band Internally Matched FET Original PDF 120.36KB 4
    FLM4450-45F
    Fujitsu MOSFET, C-Band Internally Matched FET Original PDF 196.01KB 5
    FLM4450-4B
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 52.37KB 1
    FLM4450-4B/D
    Unknown FET Data Book Scan PDF 102.64KB 2
    FLM4450-4D
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 59.52KB 1
    FLM4450-4F
    Eudyna Devices C-Band Internally Matched FET Original PDF 257.42KB 4
    FLM4450-4F
    Fujitsu C-Band Internally Matched FET Original PDF 91.83KB 4
    FLM4450-8B
    Unknown High Frequency Device Data Book (Japanese) Scan PDF 59.52KB 1
    SF Impression Pixel

    FLM4 Price and Stock

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    E-Z LOK FL-M40-HI-CR

    E-Z SONIC THREADED INSERT FOR PL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FL-M40-HI-CR Bag 141 1
    • 1 $0.69
    • 10 $0.54
    • 100 $0.43
    • 1000 $0.36
    • 10000 $0.36
    Buy Now

    Abracon Corporation ASFLM4-25.000MHZ-C

    MEMs Osc 25 MHz CMOS 5032 4-SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASFLM4-25.000MHZ-C Bulk 1
    • 1 $4.77
    • 10 $4.43
    • 100 $3.10
    • 1000 $3.10
    • 10000 $3.10
    Buy Now

    Abracon Corporation ASFLM4-80.000MHZ-L

    MEMS Osc 80 MHz CMOS 5032 4-SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASFLM4-80.000MHZ-L Bulk 1
    • 1 $3.03
    • 10 $2.67
    • 100 $2.06
    • 1000 $2.06
    • 10000 $2.06
    Buy Now

    Abracon Corporation ASFLM4-9.8304MHZ-C

    MEMs Osc 9.8304 MHz CMOS 5032 4-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASFLM4-9.8304MHZ-C Bulk 1
    • 1 $4.77
    • 10 $4.43
    • 100 $3.10
    • 1000 $3.10
    • 10000 $3.10
    Buy Now

    Abracon Corporation ASFLM4-80.000MHZ-C

    MEMs Osc 80 MHz CMOS 5032 4-SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ASFLM4-80.000MHZ-C Bulk 1
    • 1 $4.77
    • 10 $4.43
    • 100 $3.10
    • 1000 $3.10
    • 10000 $3.10
    Buy Now

    FLM4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


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    FLM4450-45F FLM4450-45F PDF

    Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    FLM4450-25F -46dBc FLM4450-25F PDF

    Contextual Info: FLM4450-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    FLM4450-12F -46dBc FLM4450-12F PDF

    Contextual Info: FLM4450-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    FLM4450-8F -46dBc FLM4450-8F 25hods PDF

    Contextual Info: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm


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    FLM4450-25F -46dBc FLM4450-25F FCSI0499M200 PDF

    Contextual Info: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-4E 36dBm -45dBc 25dBm 4450-4E PDF

    FLM4450-25D

    Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
    Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328 PDF

    Contextual Info: FLM4450-12F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 41.5dBm Typ. • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm


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    FLM4450-12F -46dBc 50ohm FLM4450-12F 25deg PDF

    FLM4450-45F

    Abstract: ED-4701 ds 6930
    Contextual Info: FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


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    FLM4450-45F FLM4450-45F ED-4701 ds 6930 PDF

    aeg 3589

    Abstract: 1 928 404 072
    Contextual Info: FLM4450-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 4.4 ~ 5.0 GHz Impedance Matched Zin/Zout = 50W


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    FLM4450-18F -46dBc FLM4450-18F FCSI0499M200 aeg 3589 1 928 404 072 PDF

    FLM4450-25F

    Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50W


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    FLM4450-25F -46dBc FLM4450-25F FCSI0499M200 PDF

    FLM4450-18F

    Contextual Info: FLM4450-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 4.4 ~ 5.0 GHz Impedance Matched Zin/Zout = 50Ω


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    FLM4450-18F -46dBc FLM4450-18F FCSI0499M200 PDF

    FLM5359-8C

    Abstract: FUJITSU MICROWAVE
    Contextual Info: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)


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    FLM2527L-20 FLM3742-4C FLM3742-8C FLM4450-4C FLM4450-8C FLM5359-4C FLM5359-8C FUJITSU MICROWAVE PDF

    FUJITSU MICROWAVE

    Abstract: FLM4450-4E
    Contextual Info: F, , FLM4450-4E J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: r!add = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-4E 36dBm -45dBc 25dBm FLM4450-4E FUJITSU MICROWAVE PDF

    FET 4016

    Abstract: FLM4450-12F
    Contextual Info: FLM4450-12F -C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 39% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm


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    FLM4450-12F -46dBc FLM4450-12F FCSI0499M200 FET 4016 PDF

    Contextual Info: FLM4450-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50W


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    FLM4450-4F -46dBc FLM4450-4F FCSI0499M200 PDF

    Contextual Info: FLM4450-8F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 39.5dBm Typ. • High Gain: G1dB = 10.0dB (Typ.) • High PAE: hadd = 36% (Typ.) • Low IM3 = -46dBc@Po = 28.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm


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    FLM4450-8F -46dBc 50ohm FLM4450-8F 25deg 25atched PDF

    FLM4450-12DA

    Contextual Info: FLM4450-12DA fujTtsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-12DA -45dBc 30dBm FLM4450-12DA PDF

    Contextual Info: FLM4450-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=46.5dBm Typ. • High Gain: G1dB=10.0dB(Typ.) • High PAE: hadd=41%(Typ.) • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package


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    FLM4450-45F 50ohm FLM4450-45F 50ohm 25deg PDF

    Contextual Info: FLM4450-4F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.5dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm


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    FLM4450-4F -46dBc 50ohm FLM4450-4F 25deg 25atched PDF

    Contextual Info: F| .ftp-. FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz


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    FLM4450-18DA -45dBc FLM4450-18DA PDF

    Contextual Info: FLM4450-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.5dBm Typ. High Gain: G ^ b = 10.0dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-8F -46dBc FLM4450-8F FCSI0499M200 PDF

    FLM4450-8F

    Contextual Info: FLM4450-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    FLM4450-8F -46dBc FLM4450-8F FCSI0499M200 PDF

    FLM4450-4F

    Contextual Info: FLM4450-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


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    FLM4450-4F -46dBc FLM4450-4F FCSI0499M200 PDF