FLASH MEMORY 38F Search Results
FLASH MEMORY 38F Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MD28F020-12/B |
![]() |
28F020 - 2048K (256K x 8) CMOS Flash Memory |
![]() |
||
MD28F020-90 |
![]() |
28F020 - 2048K (256K x 8) CMOS Flash Memory |
![]() |
||
MD28F020-90/R |
![]() |
28F020 - 2048K (256K x 8) CMOS Flash Memory |
![]() |
||
MD28F020-90/B |
![]() |
28F020 - 2048K (256K x 8) CMOS Flash Memory |
![]() |
||
TN28F020-90 |
![]() |
28F020 - 2048K (256K x 8) CMOS Flash Memory |
![]() |
FLASH MEMORY 38F Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
a21l
Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
|
Original |
MB84VFAF5F5J1-70 115-ball F0211 MB84VFAF5F5J1 a21l MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400 | |
Intel SCSP
Abstract: Intel Stacked CSP BA 658 28F160C3 28F320C3
|
Original |
16Mbit 32Mbit RD38F1010C0ZTL0 RD38F1010C0ZBL0 RD28F3208C3T90 RD38F1020C0ZTL0 RD28F3208C3B90 Intel SCSP Intel Stacked CSP BA 658 28F160C3 28F320C3 | |
Intel SCSP
Abstract: FLASH MEMORY 38F PF38F1010C0ZTL0 intel 28f 28F160C3 28F320C3 RD28F1604C3BD70 RD28F3204C3B70
|
Original |
RD28F3208C3T70 PF38F1010C0ZTL0 RD28F3208C3B90 PF38F1010C0ZBL0 RD38F1020C0ZTL0 RD28F3204C3B70 RD38F1010C0ZBL0 RD28F3208C3T90 RD28F3204C3T70 32-Mbit Intel SCSP FLASH MEMORY 38F PF38F1010C0ZTL0 intel 28f 28F160C3 28F320C3 RD28F1604C3BD70 RD28F3204C3B70 | |
MARKING HRA
Abstract: 4kw marking diode F4 4e
|
Original |
MB84VZ064G-70 107-ball MARKING HRA 4kw marking diode F4 4e | |
4kw marking
Abstract: marking code 4e
|
Original |
MB84VZ064D-70 107-ball 4kw marking marking code 4e | |
MARKING HRA
Abstract: 4kw marking
|
Original |
MB84VF5F5F5J2-70 107-ball MARKING HRA 4kw marking | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V |
Original |
DS05-50402-1E MB84VF5F5F4J2-70 107-ball | |
107-pin
Abstract: 4kw marking
|
Original |
MB84VF5F4F4J1-70 107-ball 107-pin 4kw marking | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance |
Original |
MB84VF5F4F4J2-70 107-ball | |
4kw markingContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance |
Original |
MB84VF5F5F4J2-70 107-ball 4kw marking | |
4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
|
Original |
DS05-50403-1E MB84VF5F4F4J1-70 107-ball 65for F0302 4kw marking MB84VF5F4F4J1-70 MBM29DL64DF | |
MB84VF5F5F5J2-70
Abstract: MBM29DL64DF s64M
|
Original |
DS05-50401-1E MB84VF5F5F5J2-70 107-ball F0302 MB84VF5F5F5J2-70 MBM29DL64DF s64M | |
MB84VF5F5F4J2-70
Abstract: MBM29DL64DF
|
Original |
DS05-50402-2E MB84VF5F5F4J2-70 107-ball F0302 MB84VF5F5F4J2-70 MBM29DL64DF | |
SA153Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 128M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ128B-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V |
Original |
MB84VZ128B-70 115-ball F0211 MB84VZ128B SA153 | |
|
|||
MB84VZ064G-70
Abstract: MBM29DL64DF mcp 107-ball 13
|
Original |
DS05-50502-1E MB84VZ064G-70 107-ball F0302 MB84VZ064G-70 MBM29DL64DF mcp 107-ball 13 | |
Spansion gl128
Abstract: sa5888 SPANSION gl512 27631 S29PL127J S75PL127J S75PL127JBD Spansion s29pl127j GL128 GL512
|
Original |
S75PL127J 16-Bit 64M/32M 16-Bit) 512M/256/128M 32M/16M/8M 16Bit) 110ns Spansion gl128 sa5888 SPANSION gl512 27631 S29PL127J S75PL127JBD Spansion s29pl127j GL128 GL512 | |
Intel Stacked CSP
Abstract: transistor 2N 5551 28F160C3 28F320C3 252636 RD28F1604C3BD70 2N2728
|
Original |
16Mbit 32Mbit RD38F1010C0ZTL0 RD38F1010C0ZBL0 RD28F3208C3T90 RD38F1020C0ZTL0 RD28F3208C3B90 Intel Stacked CSP transistor 2N 5551 28F160C3 28F320C3 252636 RD28F1604C3BD70 2N2728 | |
4kw markingContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD23180FM-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V • High performance 70 ns maximum access time (Flash) |
Original |
MB84VD23180FM-70 73-ball 73-pinatives 4kw marking | |
MC-222254AF9-B85X-BT3
Abstract: MC-222254A-X
|
Original |
MC-222254A-X 32M-BIT MC-222254A-X 77-pin MC-222254AF9-B85X-BT3 | |
MC-222262F9-B85X-BT3
Abstract: MC-222262-X
|
Original |
MC-222262-X 32M-BIT MC-222262-X 77-pin MC-222262F9-B85X-BT3 | |
M15451EContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can |
Original |
PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E | |
MC-222242AF9-B85X-BT3
Abstract: MC-222242A-X M14908EJ4V0DS NEC MCP SRAM FLASH
|
Original |
MC-222242A-X 32M-BIT MC-222242A-X 77-pin MC-222242AF9-B85X-BT3 M14908EJ4V0DS NEC MCP SRAM FLASH | |
MC-222252AF9-B85X-BT3
Abstract: MC-222252A-X NEC MCP SRAM FLASH
|
Original |
MC-222252A-X 32M-BIT MC-222252A-X 77-pin MC-222252AF9-B85X-BT3 NEC MCP SRAM FLASH | |
MC-222243AF9-B85X-BT3
Abstract: MC-222243A-X NEC MCP SRAM FLASH M15029E
|
Original |
MC-222243A-X 32M-BIT MC-222243A-X 77-pin MC-222243AF9-B85X-BT3 NEC MCP SRAM FLASH M15029E |