FLASH BGA Search Results
FLASH BGA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MD28F010-20/B |
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28F010 - 128K X 8 Flash, Mil Temp |
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| MD28F010-25/B |
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28F010 - 128K X 8 Flash, Mil Temp |
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| MD28F020-90/B |
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28F020 - 2048K (256K x 8) CMOS Flash Memory |
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| MD28F020-12/B |
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28F020 - 2048K (256K x 8) CMOS Flash Memory |
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| TMS320F28335ZJZS |
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Delfino™ 32-bit MCU with 150 MIPS, FPU, 512 KB Flash, EMIF, 12b ADC 176-BGA -40 to 125 |
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FLASH BGA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MEMORY MODULE NAND Flash 512Gb 3DFN512G08VB2453 NAND Flash Memory 512Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Organization (per basic component): |
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512Gb 3DFN512G08VB2453 512Gbit JESD47G 3DFP-0453-REV | |
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Contextual Info: MEMORY MODULE NAND Flash 256Gb NAND Flash Memory 3DFN256G08VB1452 256Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.1 compliant - Single Level Cell (SLC) technology - Organization: Page size x8: 8640 bytes |
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256Gb 3DFN256G08VB1452 256Gbit JESD47G 12ure 3DFP-0452-REV | |
JESD47GContextual Info: MEMORY MODULE NAND Flash 256Gb 3DFN256G08VB1456 NAND Flash Memory 256Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.2 compliant - Multi Level Cell (MLC) technology - Organization: Page size x8: 8640 bytes |
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256Gb 3DFN256G08VB1456 256Gbit JESD47G 3DFP-0456-REV | |
3d plus memoryContextual Info: MEMORY MODULE NAND Flash 64Gb 3DFN64G08VB1454 NAND Flash Memory 64Gbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.2 compliant - Multi Level Cell (MLC) technology - Organization: Page size x8: 8640 bytes |
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3DFN64G08VB1454 64Gbit JESD47G 3DFP-0454-REV 3d plus memory | |
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Contextual Info: MEMORY MODULE NAND Flash 1Tb 3DFN1T08VB2458 NAND Flash Memory 1Tbit Synchronous NAND Flash Pin Assignment Top View BGA 100 Features - Open NAND Flash interface 2.2 compliant - Multi Level Cell (MLC) technology - Organization (per basic component): Page size x8: 8640 bytes |
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3DFN1T08VB2458 JESD47G 3DFP-0458-REV | |
K9F2G08U0B-PCB0
Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
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K9F2G08U0B 07-Sep-2010 K9F2G08U0B-PCB0 samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND | |
eldoContextual Info: MEMORY MODULE NOR FLASH 32Mx16-BGA Flash Memory MODULE 3DFO512M16VB2359 512Mbit Nor Flash organized as 32Mx16, based on 16Mx16 Pin Assignment Top View BGA 64 Features - Single 3V read/program/erase (2.7V-3.6V) - VIO = VCC = 2.7 to 3.6V - 8-word/16-byte page read buffer |
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32Mx16-BGA 3DFO512M16VB2359 512Mbit 32Mx16, 16Mx16 8-word/16-byte 32-word/64-byte Kword/128 MMXX00000000XXX eldo | |
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Contextual Info: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 0.3V power supply |
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512Mx64-BGA FN32G64VB8263 32Gbit 512Mx64, 512Mx8 512Mx64-bit 512Mx8-bit MMFN64408808B-D 3DFP-0263-REV | |
a21l
Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
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MB84VFAF5F5J1-70 115-ball F0211 MB84VFAF5F5J1 a21l MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400 | |
LQFP128
Abstract: DMA stm32 STR911fa STM32 freertos PMSM control based stm32 LQFP80 STM32 induction motor control Micrium stm32 10
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STR910 32-bit 32-bit STR910FA ARM966E 288kB STM32 com/stm32 LQFP128 DMA stm32 STR911fa STM32 freertos PMSM control based stm32 LQFP80 STM32 induction motor control Micrium stm32 10 | |
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Contextual Info: MEMORY MODULE NOR FLASH 128Mx16-BGA Flash Memory MODULE 3DFO2G16VB2361 2Gbit Nor Flash organized as 128Mx16, based on 64Mx16 Pin Assignment Top View BGA 64 Features - Single 3V read/program/erase (2.7V-3.6V) - VIO = VCC = 2.7 to 3.6V - 8-word/16-byte page read buffer |
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128Mx16-BGA 3DFO2G16VB2361 128Mx16, 64Mx16 8-word/16-byte 32-word/64-byte Kword/128 MMXX00000000XXX 3DFP-0361-REV | |
107-pin
Abstract: FCRAM MBM29DL64DF
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MB84VF5F4F5J1-70 107-ball 107-pin FCRAM MBM29DL64DF | |
MARKING HRA
Abstract: 4kw marking diode F4 4e
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MB84VZ064G-70 107-ball MARKING HRA 4kw marking diode F4 4e | |
4kw marking
Abstract: marking code 4e
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MB84VZ064D-70 107-ball 4kw marking marking code 4e | |
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SOCKET TQFP100
Abstract: LFBGA144 4x4 bit multipliers SONAR car alarm STR730F
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STR730F 32-bit BRSTR730F1005 SOCKET TQFP100 LFBGA144 4x4 bit multipliers SONAR car alarm | |
sample code read and write flash memory spansion
Abstract: AN3389 AMD16x1 0x555 sample code write buffer spansion AT29 Flash Family hynix mcp AT29 CAT28F001 Spansion Flash
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M5282EVB sample code read and write flash memory spansion AN3389 AMD16x1 0x555 sample code write buffer spansion AT29 Flash Family hynix mcp AT29 CAT28F001 Spansion Flash | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V |
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DS05-50402-1E MB84VF5F5F4J2-70 107-ball | |
107-pin
Abstract: 4kw marking
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MB84VF5F4F4J1-70 107-ball 107-pin 4kw marking | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance |
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MB84VF5F4F4J2-70 107-ball | |
4kw markingContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance |
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MB84VF5F5F4J2-70 107-ball 4kw marking | |
BE 4X12
Abstract: cellphone plc car alarm LFBGA64 STR710F STR711FR1 ARM SRAM compiler
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STR710F 32-bit BRSTR710F0505 BE 4X12 cellphone plc car alarm LFBGA64 STR711FR1 ARM SRAM compiler | |
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Contextual Info: MEMORY MODULE NOR FLASH 32Mx16-BGA Flash Memory MODULE 3DFO512M16VB2359 512Mbit Nor Flash organized as 32Mx16, based on 16Mx16 Pin Assignment Top View BGA 64 Features - Single 3V read/program/erase (2.7V-3.6V) - IOs level control : 1.65V to Vcc - 8-word/16-byte page read buffer |
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32Mx16-BGA 3DFO512M16VB2359 512Mbit 32Mx16, 16Mx16 8-word/16-byte 32-word/64-byte Kword/128 MMXX00000000XXX | |
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Contextual Info: MEMORY MODULE NOR FLASH 128Mx16-BGA Flash Memory MODULE 3DFO2G16VB2361 2Gbit Nor Flash organized as 128Mx16, based on 64Mx16 Pin Assignment Top View BGA 64 Features - Single 3V read/program/erase (2.7V-3.6V) - IOs level control : 1.65V to Vcc - 8-word/16-byte page read buffer |
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128Mx16-BGA 3DFO2G16VB2361 128Mx16, 64Mx16 8-word/16-byte 32-word/64-byte Kword/128 MMXX00000000XXX 3DFP-0361-REV | |
4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
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DS05-50403-1E MB84VF5F4F4J1-70 107-ball 65for F0302 4kw marking MB84VF5F4F4J1-70 MBM29DL64DF | |