FLM717 Search Results

FLM717 Datasheets (17)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLM7177-12D	Unknown	FET Data Book	Scan	PDF	102.63KB	2
FLM7177-4C	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	52.71KB	1
FLM7177-4C/D	Unknown	FET Data Book	Scan	PDF	102.64KB	2
FLM7177-4D	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	52.71KB	1
FLM7177-8C	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	52.71KB	1
FLM7177-8C/D	Unknown	FET Data Book	Scan	PDF	102.64KB	2
FLM7177-8D	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	52.71KB	1
FLM7179-12F	Eudyna Devices	C-Band Internally Matched FET	Original	PDF	284.49KB	4
FLM7179-12F	Fujitsu	C-Band Internally Matched FET	Original	PDF	97.77KB	4
FLM7179-18F	Fujitsu	C-Band Internally Matched FET	Original	PDF	96.39KB	4
FLM7179-18F	Unknown	C-Band Internally Matched FET	Original	PDF	286.34KB	4
FLM7179-4F	Fujitsu	C-Band Internally Matched FET	Original	PDF	93.83KB	4
FLM7179-4F	Unknown	C-Band Internally Matched FET	Original	PDF	254.69KB	4
FLM7179-6F	Eudyna Devices	FET Misc, C-Band Internally Matched FET	Original	PDF	256.12KB	4

FLM7179-6F	Fujitsu	C-Band Internally Matched FET	Original	PDF	93.09KB	4
FLM7179-8F	Fujitsu	C-Band Internally Matched FET	Original	PDF	95.53KB	4
FLM7179-8F	Unknown	C-Band Internally Matched FET	Original	PDF	256.91KB	4

FLM717 Price and Stock

Filter by Manufacturer

Sumitomo Wiring Systems LTD


Sumitomo Wiring Systems LTD FLM7179-8F/610
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLM7179-8F/610		23			1 $185.51 10 $180.21 100 $169.60 1000 $169.60 10000 $169.60	Buy Now

FLM717 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-18f -46dbc	PDF
FLM7177-18DA Abstract: T-34038 Contextual Info: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	flm7177-18da -45dbc symbo474 t-34038	PDF
Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	flm7179-6f -46dbc fcsi0598m200	PDF
FLM7179-8F Contextual Info: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-8f -46dbc fcsi0598m200	PDF
108 to 174 mhz Abstract: FLM7179-4F Contextual Info: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-4f -46dbc fcsi0999m200 108 to 174 mhz	PDF
K1461 Abstract: BD189 BD185 735M Contextual Info: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com	OCR Scan	q0flm717 bd185 bd189 k1461 +1735m	PDF
Contextual Info: FLM7177-IHDA Internally Matched Power G a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Item Condition Rating Unit Draln-Souree Voltage VDS 15 V Gate-Source Voltage VGS -5 V 83.3 w Total Power Dissipation Tc = 25°C pt Storage Temperature	OCR Scan	flm7177-ihda 37dbm ------34dbm	PDF
27.5dbm ,GaAs FET Abstract: FLM7179-6F Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-6f -46dbc 27.5dbm ,gaas fet	PDF
Contextual Info: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: hadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	flm7179-18f -46dbc fcsi0599m200	PDF
Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	flm7179-12f -46dbc fcsi0599m200	PDF
Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-12f -46dbc	PDF
FLM7179-12F Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-12f -46dbc fcsi0599m200	PDF
7177-4C Contextual Info: FLM7177-4C Internally M atch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Symbol Condition Rating Unit Draln-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 25 w Total Power Dissipation Pt Tc = 25°C Storage Temperature	OCR Scan	flm7177-4c 30dbm 7177-4c	PDF
FLM7179-8F Contextual Info: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 39.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	-46dbc flm7179-8f fcsi0598m200	PDF

FLM7179-18F Contextual Info: FLM7179-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-18f -46dbc	PDF
FLM7177-8C Contextual Info: FLM7177-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package	OCR Scan	flm7177-8c 39dbm 7177-8c	PDF
Contextual Info: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	flm7179-8f -46dbc fcsi0598m200	PDF
7177-8C Abstract: FLM7177-8C/D Contextual Info: FLM7177-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	flm7177-8c 39dbm 7177-8c flm7177-8c/d	PDF
FLM7177-12D Abstract: FLM7177 Contextual Info: çP FLM7177-12DA lUJI I j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 41 dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	flm7177-12da -45dbc 30dbm flm7177-12d +1flm7177	PDF
FLM7179-8F Contextual Info: FLM7179-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω	Original	flm7179-8f -46dbc	PDF
FLM7177-8D Abstract: i80m Contextual Info: FLM7177-8D FimTÇII rU JI Ij U Internally M a tc h e d P o w e r G aA s F E T s FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz	OCR Scan	flm7177-8d 39dbm -45dbc 28dbm +27177-8d i80m	PDF
Contextual Info: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	flm7179-4f -46dbc fcsi0999m200	PDF
Contextual Info: FLM7179-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.0dB (Typ.) High PAE: hadd = 35% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50W	Original	flm7179-4f -46dbc fcsi0598m200	PDF
FLM7179-12F Abstract: cq 443 fet 2819 18 g Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	-46dbc flm7179-12f fcsi0599m200 cq 443 +1fet 2819 18 g	PDF

FLM717 Search Results

FLM717 Datasheets (17)

FLM717 Price and Stock

Sumitomo Wiring Systems LTD FLM7179-8F/610

FLM717 Datasheets Context Search

FLM7177-18DA

FLM7179-8F

108 to 174 mhz

K1461

27.5dbm ,GaAs FET

FLM7179-12F

7177-4C

FLM7179-8F

FLM7179-18F

FLM7177-8C

7177-8C

FLM7177-12D

FLM7179-8F

FLM7177-8D

FLM7179-12F