Transistor BFR 97
Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package
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fl23sbosq0qmb742n6619023sbos+1200g4b77bfr35atransistor bfr 97transistor bfr 39transistor npn d 2058transistor bfr 35transistor bfr 98transistor bfr 38transistor bfr 80transistor bfr 91k 2056 transistortransistor bfr 79
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tca 335 A
Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range
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fl23sbosq67000-a2272q67000-a227fl235b05+50034b5mtca335tca 335 atca 765tca335a
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sab 8031a-p
Abstract: 8031a microcontroller Siemens SAB 8031 sab 8031a SAB 8051A-P 8031a
Contextual Info: SIEM EN S 47E D • fl23SbOS 0G2ÔÜ5Ô 0 I SI Ef i SIEMENS AKTIENGESELLSCHAF SAB 8051A/8031A Ext. Temp 8-Bit Single-Chip Microcontroller Extended Temperature Range: -4 0 *0 to +85°C -4 0 'C to +110*0 Mask-Programmable ROM SAB 8051A-12-P-T40/85 SAB 8051A-10-P-T40/110
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fl23sbos051a/8031a051a-12-p-t40/85051a-10-p-t40/110+12031a-12-p-t40/85031a-10-p-t40/110-12-t40/85-10-t40/11016-bitfl235bq5sab 8031a-p8031a microcontrollersiemens sab 8031sab 8031asab 8051a-p8031a
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Contextual Info: bOE J> • fl23Sfc.05 004L.2S3 L.Tb ■ S I E G SIEMENS LS T672-MO ORANGE LO T672-MO YELLOW LY T672-MO GREEN LG T672-MO PURE GREEN LP T672-LO SUPER-RED SIEMENS AKTIENGESELLSCHAF Super-TOP-LED , Surface Mount LED Lamp Package Dimensions in Inches mm 0 8 3 (2 1 }
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fl23sfct672-mot672-lo |
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E3043
Abstract: E3062A
Contextual Info: fl23Sb05 0001337 4ñ0 S IE M E N S HITFET BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Continious drain source • Input protection ESO On-state resistance • Thermal shutdown Current limitation • Overload protection
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23sbds235bostq220/5q67060-xx+4gpt0s165t0220/5e3043e3062a
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transistor BD 430
Abstract: 0436L
Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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fl23sb050d043fal0436lfl335b05+2q0043b2transistor bd 430
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transistor s0014
Abstract: S0014
Contextual Info: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong
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fl23sbos00272flbcath00etransistor s0014+1s0014
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SAB 8051a p
Abstract: intel 8051A SAB 8051 p SAB 81 C 50 P 8352-5-16-P-T3 SiEMENS EC 350 98 SIEMENS SAB 8051A-P
Contextual Info: m fl23SbOS OOS'ISM'i 0 « S I E G 47E D SIEM EN S SIEMENS AKTIENGESELLSCHAF 7= V ?-/?-£> r 8-Bit Single Chip Microcontroller SAB 80513/80513-16 SAB 8352-5/8352-5-16 Preliminary Data SAB 80513/80513-16 SAB 8352-5/8352-5-16 • • • • • • • • •
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fl23sboshz/1616-bitd0s157s+11sab80513/8352-52-12mhz12-16mhzcs00747sab 8051a pintel 8051asab 8051 psab 81 c 50 p8352-5-16-p-t3siemens ec 350 98siemens sab 8051a-p
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Contextual Info: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.
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fl23sbos000ms2162702-f54282-02t |
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9 ELEMENT photoDIODE ARRAY
Abstract: photodiode linear array
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D fl23Sb05 0 D 2 7 4 4 ‘Ì fi « S I E G SIEM ENS KOM 0622045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT ~ ~ p 4 i- 5 5 Outline Drawing Dimensions mm P C board Strip Chip •L Jki f LT^Lr 13.7 . 13.1 —I— 111 11j 11j 111
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fl23sb05125x29 element photodiode arrayphotodiode linear array |
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d880
Contextual Info: öflD D • fl23SbGS 00150^0 G « S I E G 88D 15098 D T * mS f f î ' C b BUZ 383 SIEMENS AKTIEN6ESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance Description Case voa h ^D S o n a 400V » 11,6 A = 0,5 Si
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fl23sbgsc67078-a3308-a223sb05fl23sb05+1d880
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THYRISTOR br 403
Abstract: SIEMENS THYRISTOR thyristor 808 BR403
Contextual Info: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications
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fl23sbos0g047blbr40362702-r+3thyristor br 403siemens thyristorthyristor 808
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74LS04C
Abstract: gd5f 80515K m8ab
Contextual Info: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports
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fl23sfci80515k16-bit53sbd5+7sab80515k2-12mhz74ls04i10pf74ls04cgd5fm8ab
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MIL-D-87157
Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
Contextual Info: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
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ae3sb05msd2010txv/txvbtmsd2011txv/txvbmsd2012txv/txvb+13msd2013txv/txvbfie35b05gd27qq-4i-37-335ma410mamil-d-87157msd2010msd2011msd2012mil-std-750 2072appnote44mil-std-883-method 2016
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5360-J
Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°
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fl23sbost13/45360-dg5360-gk+125360-elys360-h5360-f5360-hl5360-fj5360-j5360-klg diodec 5360lg 42 t53605360e
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23sbos0g04737bfx55q60206-x55+9fl235bos3004xtransistor bfx 59634 transistorbfx 6363310-ad-10transistor bfx 90bfx 79
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a1011
Abstract: 3A21N BUZ25 C67078-A1011-A2 V103 T2030
Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS AK TI EN GES ELL SCH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description C ase Type
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23sb0sbuz25c67078-a1011-a2fi23sfc+5fl23sb05a10113a21nv103t2030
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KDS 7c
Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
Contextual Info: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode
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fl23sb05c67078-a3116-a2fl23stqq15012+5fl23sboskds 7ca3116diode s45156* diode
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BPX38
Abstract: flux meter glass lens phototransistor
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)
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bpx38fi23sbosd027501flux meter+1glass lens phototransistor
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transistor BC 153
Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719
Contextual Info: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF
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23sbqs0q04104bc1401q60203-x140+16q60203-x140-v6q60203-x140-v10q60203-x140-v16q60203-x140-p140/bc160q62702-c228-s2transistor bc 153transistor bc 141bcy41bc transistor seriestransistor bc seriestransistor bc140transistor bc 310bc 103 transistortransistor bc 103transistor c719
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LPD-80A
Abstract: A950
Contextual Info: SIEMENS AKTIENGESELLSCHAF i4?E » • fl23SbOS D D 2 7 S 0 A SIEMENS T «SIEG LPD-80A PHOTODARLINGTON M ¿3 Advance Data Sheet FEATURES Maximum Ratings • Silicon NPN Photodarlington • Miniature Side-Facing Package Collector Emitter Voltage Emitter Collector Voltage
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023sbosdd27s0lpd-80airl-80a+1a950
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photoresistor LDR 1000
Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
Contextual Info: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi nation of extremely high-intensity light em it ting diodes LED as emitters and specific photocell as detectors. Both elements are
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/002llt2002lt2001lt2011+9photoresistor ldr 1000photoresistorphotoresistor ldrheimannheimann ltdiode lt 02siemens optocoupler illdr photocellphotocell ldr
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Contextual Info: bGE D fl23Sb05 G04b54fi Tfll • S I E G SIEMENS SFH 2310 GE-AVALANCHE PHOTODIODE TO PACKAGE SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm C hip Location FEATURES Maximum Ratings * Sensitive Receiver for the 2 nd W indow 1300 nm
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fl23sb05g04b54fi |
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Contextual Info: bOE D fl23Sb05 SIEMENS OOSQbOÜ MMT H S I E ä S I E M EN S A K T I E N G E S E L L S C H A F Intelligent Double Low-Side Switch 2 x 0.5 A TLE 4214 Bipolar IC Features • Double low-side switch, 2 x 0.5 A • Power limitation • Overtemperature shutdown
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fl23sb05q67000-a8183q67000-a9094-dso-20-l+2p-dso-20-1fl235bg5
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