FL235BOS Search Results

1431A

Abstract: 5060AB
Contextual Info: SIEMENS AKTIEN GESELLS CHA F 4?E " fl235bOS 0027^12 5 • SIEG M 9960 Application: • exposure meters in cameras • automatic light intensity control Features: • epoxy-coated low profile cell • small dimensions TYP M 9960 11 a 9960 11 b R10 R100 [kQJ

10RJ

Abstract: KCB05 BCY67 F-05 Q62702-C254 510zma 5v 10rj
Contextual Info: 55C D • fl235bOS 000431^ 1 SIEG BCY67 7 ^ ^ 7 - Z- 3 PNP Silicon Planartransistor SIEMENS AKTIENfiESELLSCHAF 04319 BCY 67 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided

Contextual Info: • fl235bOS DDTBlMb 304 ■ SIEMENS PROFET BTS721L1 Smart Four Channel Highside Power Switch Product Summary Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump

quadrant photodiode

Abstract: D027455 i380
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E » • fl235bOS G027455 3 « S I E G S IE M E N S SFH204 SILICON FOUR QUADRANT PHOTODIODE T - - H 1- 5 I Package Dimensions in Inches mm — 21 (5.4) 1 8 ( 4 , 5 ) _ - 020 .18 (4,5) 17 (4,3) ^ if_* \r ^ J (0,5) . .30 (7,5)

633sb

Contextual Info: fl235bOS D037b47 7 SIEG □ M K T Capacitors SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 32529 ft~ O S l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

m8334

Contextual Info: fl235bOS D037b47 7 SIEG M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

TLE4216 G

Contextual Info: tDE D I fl235bOS OOSObMl Tb2 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Intelligent Sixfold Low-Side Switch TLE 4216 Features • Double low-side switch, 2 x 0.5A • Quad low-side switch, 4 x 50 mA • Power limitation • Open-collector outputs • Overtemperature shutdown

Siemens MKT

Contextual Info: fl235bOS D037b47 7 SIEG □ MKT Capacitors SIEMENS AKTIENGESELLSCHAF M7E D B 32520 .B 32529 ft~ O S l7-o Metalized polyester film capacitors in accordance w ith DIN 44112 VR = 63 to 630 Vdc With quality assessment according to CECC 30401-043, edition 1, June 1983.

BF 145 transistor

Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
Contextual Info: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance

capacitor 1.50 MKT 400V

Abstract: IEC 68-2-6 Vibration c1474 C3105 1.50 MKT av series C3684 mkt 1.50 400V capacitor 0 033 j mkt 250v capacitor 100 nf 100v mkt Siemens film capacitor
Contextual Info: fl235bOS GG37b47 7 • S IE G MKT Capacitors SIEMENS A K T I E N 6 E S E L L S C H A F M7E D -/ f 'C E3 B 32520 .B 32529 fS l 7 ' O S. M e ta liz a d p o ly e s te r film c a p a c ito rs in a c c o rd a n c e w it h DIN 4 4 1 1 2 VR = 63 to 6 3 0 Vdc

Contextual Info: • fl235bOS D0fll343 7Ö4 SIEMENS Smart Sixfold Low-Side Switch TLE 5212 G Preliminary Data SPT-IC Overview Features • • • • • • • • Overload protection Short circuit protection Cascadeable serial diagnostic interface Overvoltage protection

t 326 Transistor

Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Contextual Info: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is

siemens EM 235

Abstract: siemens igbt DD45 BSM 75 GB 120 D siemens igbt BSM 150 Gb 160 d siemens igbt BSM 75 gb 100
Contextual Info: feOE D • fl235bOS 004Sflb4 TÔT ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 75 GB 120 D BSM 75 G AL 120 D IGBT Module Preliminary Data y CE = 1 2 0 0 V / c = 2 x 100 A at Tc = 25 C / c = 2 x 7 5 A at r c = 8 0 C • • • • • Power m odule Half-bridge/Chopper

diode zener ZD 103

Abstract: CQ 419 BTS542D2 transistor MN 6B diode T77 7a BTS542
Contextual Info: • fl235bOS □OfllSH'ì Tb4 I S IE M E N S PROFET B T S 542D 2 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation

SMD Transistor 1c

Contextual Info: • fl235bOS ÜÜ^LSflö I b ^ SIEM ENS 5-V Low-Drop Fixed Voltage Regulator TLE 4268 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Low-drop voltage Watchdog Settable reset threshold Overtemperature protection

426L1

Contextual Info: SIEMENS Û23 • PROFETO fl235bOS 0 0 ^ 2 7 2 ^ b TS 426 L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features * Overload protection * Current limitation * Short circuit protection

bfr 547

Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39
Contextual Info: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise

diodo A6

Abstract: PJ 63 MM diode Wf VQE 23 F wf vqe 24 d DIODO LED ir wf vqe 24 f WF vqe 24 e WF VQE 23 E din 40040 humidity WF VQE 22 d
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF ^7E D • fl235bOS 00272flb b « S I E G S IE M E N S SFH 601G SERIES PHOTOTRANSISTOR OPTOCOUPLER 63 Package Dimensions in Inches mm 807(7.81 29\ (7.4) J p o ti) E E E a 3 7 ] BASE AN00C E ^ CATH00E E 3 NC E COLLECTOR ■<d J^EMITTï B

Contextual Info: 13—T flñD D • fl235bOS GQlMbSb H ■ SIEG Ö8D 14696 D 7*^3«?^// w '1 BUZ 60 B — SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel a 400V Draln-source voltage l^ S = 4,5 A Continuous drain current /d Draln-source on-reslstance ^DS on) = 1,5 n

Contextual Info: SIEMENS AKTIENG ESEL LSCH AF 47E fl235bOS QOSTRlb 2 ISIE6 \ U 1160 Application: • flame detectors in oil burner control devices • contrast control in TV sets • twilight switching for outdoor application Features: • reed greenglass housing • hermetically sealed

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

C6104

Abstract: C3684 c1474 C3104
Contextual Info: fl235bOS D037b47 7 M K T Capacitors S IE G □ SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~ O S l 7 - o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.

A04407

Abstract: 14A3 A-04 C67078-A1312-A4 H-17
Contextual Info: 13—T flñD D • fl235bOS GQlMbSb H ■ S I E G Ö8D 14696 D 7*^3«?^// w '1 BU Z 60 B — SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case l^ S /d

Siebensegmentanzeige

Abstract: HDSP-A101
Contextual Info: SIEM ENS ^ ^ fl235bOS GD27Ô01 7 • SIEG SIEMENS AKT IENG ESELLSCHAF Sieben-Segment-Anzeige HDSP-A101 Severi Segment Display 7,6 mm 0.3” Niedrigstromversion Low Current Version I-2/2 ^ Besondere Merkmale • Geringe Verlustleistung (typ.): 1,6 mW/Seg