FIPD42641 Search Results

UPD4265160-A60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4264160, 4265160 6 4 M -B IT D YN A M IC RAM 4 M -W O R D BY 16-BIT, FAST PAGE M O DE Description The /iPD 4264160,4265160 are 4,194,304 words by 16 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC mP D 4264165, 4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 4 2 6 4 16 0 , 4 2 6 5 16 0 64 M-BIT DYNAMIC RAM 4M -W O RD BY 16-BIT, FAST PAGE MODE Description The /iP D 426 416 0,4265160 are 4,194,304 words by 16 bits dynamic C MOS RAMs. The fast page mode capability

uPD4265160

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: NEC yPD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Description Pin Identification The ¿/PD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced

Contextual Info: pPD42641 4,194,304 x 1-Bit Silicon File NEC Electronics Inc. Prelim inary Information Pin Identification Description The /j PD42641 is a fast-page, low-power dynam ic RAM o rganized as 4,194,304 words by 1 bit and designed to o p e ra te from a single + 5 -v o lt power supply. Advanced

83CL-8867A

Contextual Info: JTV "* JL W NEC Electronics Inc. Pin Identification The juPD42641 is a fast-page, low-power dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes silicon area and pro­

BIPD

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ffP P 4264165, 4265165 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAQE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode