FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Search Results

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
CA3130AT/B	Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF
CA3130T	Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF
CA3130AT	Rochester Electronics LLC	CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output	PDF

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TK2P60D Abstract: K2P60D Contextual Info: TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) 0.8 MAX. Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS	Original	TK2P60D TK2P60D K2P60D	PDF
K2P60D Abstract: TK2P60D Contextual Info: TK2P60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK2P60D Switching Regulator Applications Unit: mm 5.5 ± 0.2 1.2 MAX. Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V	Original	TK2P60D K2P60D TK2P60D	PDF
Contextual Info: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)	Original	TK4P60DB 14MAX 58MAX	PDF
TK4P60DB Abstract: MOS FIELD EFFECT TRANSISTOR Contextual Info: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)	Original	TK4P60DB 14MAX 58MAX TK4P60DB MOS FIELD EFFECT TRANSISTOR	PDF
Contextual Info: TK4P60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4P60DB Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.7 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2	Original	TK4P60DB 14MAX 58MAX	PDF
Contextual Info: TK4P60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4P60DA Switching Regulator Applications Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V ID 3.5 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1)	Original	TK4P60DA 14MAX 58MAX	PDF
Contextual Info: SSM6L40TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20	Original	SSM6L40TU	PDF
Contextual Info: SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 2.1±0.1 Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage	Original	SSM6N39TU	PDF
2sk3569 Abstract: 2SK3569 equivalent transistor 2SK3569 lw015f84 Contextual Info: TENTATIVE 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3569 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage	Original	2SK3569 2sk3569 2SK3569 equivalent transistor 2SK3569 lw015f84	PDF
K4115 toshiba Abstract: TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F) Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2	Original	2SK4115 K4115 toshiba TRANSISTOR K4115 TRANSISTOR 2SK4115 K4115 toshiba transistor 2sk4115 toshiba k4115 2SK4115(F)	PDF
Contextual Info: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2	Original	TK6P53D 14MAX 58MAX	PDF
SSM6L14FE Contextual Info: SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.6±0.05 Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC	Original	SSM6L14FE SSM6L14FE	PDF
Contextual Info: SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications • Low ON-resistance: Ron = 38.5mΩ max (@VGS = 4.5V) Unit: mm 2.1±0.1 Ron = 25.0mΩ (max) (@VGS = 10V) Unit Drain–source voltage VDSS	Original	SSM6K406TU	PDF
Contextual Info: SSM6L14FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L14FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.6±0.05 Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V DC	Original	SSM6L14FE 05mitation,	PDF

TK6P Abstract: TK6P53D transistor Toshiba Contextual Info: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2	Original	TK6P53D 14MAX 58MAX TK6P TK6P53D transistor Toshiba	PDF
Contextual Info: TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6P53D Switching Regulator Applications Rating Unit Drain-source voltage VDSS 525 V Gate-source voltage VGSS ±30 V ID 6 DC Drain current (Note 1) Pulse (t = 1 ms) (Note 1) 1.08±0.2	Original	TK6P53D 14MAX 58MAX	PDF
Contextual Info: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK12J60U	PDF
k15j60u Abstract: TK15J60U K15J60 SC-65 TC40160 Contextual Info: TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK15J60U k15j60u TK15J60U K15J60 SC-65 TC40160	PDF
k20j60 Abstract: K20J60U Contextual Info: TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit	Original	TK20J60U k20j60 K20J60U	PDF
k15j60u Contextual Info: TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK15J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V 1.0 0.3 0.25 5.45 ± 0.2 5.45 ± 0.2 4.8 MAX. Unit	Original	TK15J60U k15j60u	PDF
k12j60 Abstract: K12J60U ELEVATOR K12J S7514 K12J6 Contextual Info: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK12J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK12J60U k12j60 K12J60U ELEVATOR K12J S7514 K12J6	PDF
Contextual Info: TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20J60U Switching Regulator Applications Unit: mm 20.5 ± 0.5 Drain-source voltage VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V 5.45 ± 0.2 4.8 MAX. 1.0 ＋0.3 －0.25	Original	TK20J60U	PDF
2SK3667 Abstract: 2sk3667 transistor equivalent 2SK3667 equivalent Contextual Info: TENTATIVE 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3667 unit：ｍｍ Switching Regulator Applications 10±0.3 φ3.2±0.2 1.1 1.1 Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600	Original	2SK3667 2SK3667 2sk3667 transistor equivalent 2SK3667 equivalent	PDF
2SK3567 Abstract: 2SK3567 equivalent Contextual Info: TENTATIVE 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 unit：ｍｍ Switching Regulator Applications 10±0.3 φ3.2±0.2 1.1 1.1 Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600	Original	2SK3567 2SK3567 2SK3567 equivalent	PDF

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Search Results

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Result Highlights (5)

FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS VDSS 600 Datasheets Context Search

TK2P60D

K2P60D

TK4P60DB

2sk3569

K4115 toshiba

SSM6L14FE

TK6P

k15j60u

k20j60

k15j60u

k12j60

2SK3667

2SK3567