FIELD EFFECT TRANSISTOR PNP Search Results

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

TPCP8F01

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

IGBT/MOSFET Gate Drive

Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
Contextual Info: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

TPCP8F01

Abstract: MARKING CODE 24 TRANSISTOR
Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A 5 8 • 0.475 High DC current gain: hFE = 200 to 500 IC = −0.5 A

Contextual Info: SEMICONDUCTOR KTX321U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.

siemens igbt chip

Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
Contextual Info: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional

KTX321U

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.

KTX321U

Abstract: ISS-53 ISS53
Contextual Info: SEMICONDUCTOR KTX321U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR POWER MANAGEMENT. FEATURES B B1 Including two devices in US6. Ultra Super mini type with 6 leads 1 6 2 5 3 4 DIM A A1 B A C Reduce a quantity of parts and manufacturing process.

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET

Application Note 91

Abstract: 81227 power BJT anti saturation diode IGBT gate driver ic optocoupler without base pin for mosfet driver IGBT EQUIVALENT BJT isolated Base Drive circuit mosfet igbt gate driver ic IGBT parallel DRIVE OSCILLATION optocoupler pnp
Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 91 IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect

FDV302P

Abstract: SOIC-16 Zener Diode SOT-23 302 sot 23
Contextual Info: SEMICONDUCTOR FDV302P Digital FET, P-Channel General Description Features This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

transistor 5bw

Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
Contextual Info: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>

CJB99

Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 3, 12/2005 RF Reference Design Library RF Power Field Effect Transistor MRF21120R6 UMTS N - Channel Enhancement - Mode Lateral MOSFET

Contextual Info: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

Contextual Info: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

DIN 72 585

Abstract: VB11 MARKING 5 PIN
Contextual Info: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

Contextual Info: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

Contextual Info: DRV3204-Q1 www.ti.com SLVSBT3B – MARCH 2013 – REVISED JULY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

Contextual Info: DRV3204-Q1 www.ti.com SLVSBT3A – MARCH 2013 – REVISED MARCH 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204-Q1 FEATURES DESCRIPTION • The DRV3204-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

MOSFET marking Z5

Abstract: 56590653B z14 b marking Freescale MARKING W3
Contextual Info: Document Number: MRF284 Rev. 18, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF284LSR1 Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

Contextual Info: DRV3204E-Q1 www.ti.com SLVSCB5A – OCTOBER 2013 – REVISED JANUARY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204E-Q1 FEATURES DESCRIPTION • • The DRV3204E-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

Contextual Info: DRV3204E-Q1 www.ti.com SLVSCB5A – OCTOBER 2013 – REVISED JANUARY 2013 Three-Phase Brushless Motor Driver Check for Samples: DRV3204E-Q1 FEATURES DESCRIPTION • • The DRV3204E-Q1 device is a field-effect transistor FET pre-driver designed for three-phase motor

MRF282

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and