FIC 106 Search Results

CP-700

Abstract: .085 SEMI-RIGID CABLE KTH-2145 NTE 743 IC SR 1503 CP-200a CP1000 Ktg 431 cp-1000 kings cable trim code
Contextual Info: CABLING PROCEDURE SKINGS INDEX TO LOCATE THE CABLING PROCEDURE FOR A SPECI­ FIC CONNECTOR, LOOK UP THE CABLE TRIM CODE FOR THAT CONNECTOR IN THE CONNECTOR LIST­ INGS, THEN FIND THE PAGE FOR THE CABLING PROCE­ DURE IN THIS INDEX. PAGE PAGE CP-200A. 73

ASTM-A581

Abstract: ASTM-A-581 UNS-C17300 C17300 B1969 ASTM-B-488
Contextual Info: SPECI FIC ATI ON 1. MATING 2. CONTROL INTERFACE DIMENSIONS P e r DYNAWAVE M D -9 7 SSMA JACK AIR INTERFACE . ELECTRICAL FREQUENCY RANGE GHz VSWR (MAX.) * -INSERTION LOSS (d B MAX.) * NOMINAL IMPEDANCE (OHMS)VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB RATING (DEGREES CENTIGRADE)-DIELECTRIC WITHSTANDING VOLTAGE (MAX VRMS)

Contextual Info: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits

Contextual Info: Te m ic M44C636 TELEFUNKEN Semiconductors Low Voltage, Low Power 4-Bit Microcontroller The M44C636 is a member of the MARC4 family of low cost, single chip CMOS microcontrollers. This 4-bit fiC con­ tains an on-chip RC oscillator, CPU core, 4 KByte ROM, 253 x 4-bit RAM, 16 I/O lines, 32-kHz crystal oscillator,

C17300

Abstract: QQ-P-35 UNS-C17300
Contextual Info: SPECI FIC ATI ON 1. MATING CONTROL INTERFACE DIMENSIONS M IL -S T D -3 4 8 Fig. 3 0 4 . 2 DRAWING N JACK . 2 . ELECTRICAL FREQUENCY RANGE G H z -VSWR (MAX.) * -INSERTION LOSS (d B M A X .) * -NOMINAL IMPEDANCE (OHMS)-VOLTAGE RATING (MAX VRMS)-RF LEAKAGE (MIN. dB RATING (DEGREES CENTIGRADE) —

FGE0500

Abstract: FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050
Contextual Info: FGE Series ECL Gate Arrays F A IR C H IL D A Schlumberc J/n A 005596 January 1986 n Description 0r>y ^ Gate Array Division FiC The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

Contextual Info: W I R E L E S S 4 fiC Quality Corporate Quality Policy Atm el will provide a Competitive Advantage to its Customers through Timely, Innovative, Defect-Free Products and Outstanding Service Driven by a Culture o f Systematic Continuous Improvement. F igure 1. A tm el W ireless & M icro co n tro llers quality policy

Contextual Info: MOTOROLA Order this document by MRFIC0916/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line G e n eral P urpose RF C asco d e A m p lifie r M R FIC 0916 The MRFIC0916 is a cost-effective, high isolation cascode silicon mono­ lithic amplifier in the industry standard S O T -143 surface mount package de­

st 9635

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line 1.8 GHz LNA/Downmixer Designed prim arily for use in DECT, Japan Personal Handy Phone JPHP , and other w ireless Personal Comm unication System s (PCS) applications. The M R FIC 1804 includ es a low no ise a m p lifie r and do w n m ix e r in a low -co st

ASTM-B196-90

Abstract: C17300 QQ-P-35 ASTM-A581
Contextual Info: SPECI FIC ATI ON CONTROL •005 MIN, DRAWING 096. ,090 EMI GASKET 328 #10-36 UN S-2A ,065 1. MATING 2. 0,472 FEM ALE SOCKET AC CEPTS 0,021/,017 x ,100 MAX, LENG PIN INTERFACE DIMENSIONS P E R M I L -S T D -3 4 8 Fig. 3 1 9 .2 SSMA JACK . ELECTRICAL FREQUENCY RANGE GHz

Contextual Info: $p' BATE REV ECN APPH BY 1 /3 1/0 6 B2 7461 JM - 1 B NDTESi 1. PLUG MATERIALS: TOP/BOTTOM HDUSING' FROM! PLA S FIC i LOAD BAR: LEXAN THERMOPLASTIC U L94 V - 0 THERMOPLASTIC U L9 4 V - 0 CONTACTS/SHIELD' COPPER ALLDY S H IE L D /F E R R U L E PLATING ' TIN

Contextual Info: P2 CONN PI CONN TYPE PL75 I PL75FL I PL375 SCHEMATICS El I E2 I E3 I E4 I El } *2 1 E3 1 E4 1 El 1 E2 1 E3 I E4 1 El I E2 1 E3 1 E4 1 El 1 E2 | E3 1 E4 FIC NO PL73 TYPE BJ20 ÜBJ26 BJ29 UBJ29 BJ46 UBJ46 BJ49 UBJ49 INCB .005 .030 .143 .218 .223 .261 .286 .505

tag 8820

Abstract: Ic 9430 m2403 MAXIM 1535 CE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC2403 2.4 GHz GaAs Power Amplifier The M R FIC 2 4 0 3 is a tw o-stage class B G a A s power amplifier in a low -cost 16 lead plastic package designed for use in the 2.4 to 2.5 G H z IndustrialScientific-M ed ical ISM band. The design is optimized for efficiency at 5.0 Volt

4511 gm

Abstract: TTC 5200 ir 8707 nte 6250 76722 8840 TIC 1260 stoneridge se 5000 x4202 STR G 6352 SG 3425 N
Contextual Info: ülmEE Distributors W I R E L E S S 4 fiC Europe Austria SPO ERL E ELE C TR O N IC Am K ehlerpark 1 6850 D ornbirn Tel: 43 5572 38 65 0 0 -0 Fax: 43 5572 38 65 0 0 -9 0 A rrow D enm ark A/S S m edeholm 13 A 2730 Herlev Tel: 45 44 50 82 00 Fax: 45 44 50 82 03

D 5888 s

Abstract: st 9926 am 5888
Contextual Info: NOTES 1. 2. 3. 4. 5. M ATERIAL; NYLON 6/6. 94V -2. FN IShk S E E C R M P TERM H A L DRAWING. TH IS PRODUCT CONFORM S TO PRO DUCT SP E C FIC A T IO N P S-0 8 -5 0 . PAC KAG N G : BULK CONNECTOR TO BE U SE D WITH C R M P T E R M IN A L S 2 4 7 6 -x i 1 8-24 GAGE W RE, .110/ 2.79 MAX. INSULATION DIAMETER.

Contextual Info: Customer Information Sheet DRAWING No.: SHEET H3486-42 2 OF 2 J IF IN DOUBT • 3.50 6 - . 00 TO SCALE THIRD ANGLE PROJECTION I ALL DIMENSIONS I N mm - ± 0 SPECI FIC ATI ON MATERIALS: S H E L L : B R A S S C W 6 I 4 N M T O B S I 2 I 64 C L I P : B E R Y L L I U M C O P P E R C I 7 2 0 0 HM

HE901-HE902

Abstract: he902
Contextual Info: Serie 254 double face - Pas 2,54m m Norme NF C/UTE 9 3 - 4 2 3 - Modeles H E 9 0 1 H E 9 0 2 DESCRIPTION DE LA FICHE La fic h e m a le p o u r c a rte im p r im e e d o u b le fa c e d e 1 ,6 ± 0 ,2 m m d 'e p a is s e u r, re a lise e c a n s les a rra n g e m e n ts

Am29C

Abstract: PD27 PD35 SC06 Packages SCO-61
Contextual Info: DESC FORM 193-1 SFP R7 0/ D IS T R IB U T IO N S T A T E M E N T A. *u.s g o v e r n m e n t p r i n t i n g o f fic e : i987—748-129/00912 5962-El 748 A p p ro v e d fo r p u b lic re le a s e ; d is trib u tio n Is u n lim ite d . 1. SCOPE 1. 1 Scope. Thi s drawi ng descr i bes devi ce r equi rement s f o r cl ass B mi c r o c i r c u i t s i n accordance

Contextual Info: cP IITSU Sept. 1998 Revision 1.2 data sheet GOB512UV6432 A/B -(70/80/10)Q-S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6432(A/B)-(70/80/10)Q-S is a high performance, 4-megabyte synchronous, graphic RAM module organized as

Contextual Info: cP IITSU May 1997 Revision 1.0 data sheet SDC2UV6482D- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482D -(67/84/100/125)T-S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as

Contextual Info: cP IITSU June 1997 Revision 1.1 data sheet SDC2UV6482C- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482C -(67/84/100/125)T-S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as

Contextual Info: cP IITSU May 1997 Revision 1.2 data sheet SDC16UV7284- 67/84/100/125 T-S 128MByte (16Mx 72) CMOS Synchronous DRAM Module General Description The S D C 16U V 7284-(67/84/100/125)T-S is a high performance, 128-m egabtye synchronous, dynamic RAM module organized

Contextual Info: IITSU cP June 1997 Revision 1.0 data sheet SDC4UV6482D- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The S D C 4U V 6482D -(67/84/100/125)T-S is a high performance, 32-m egabtye synchronous, dynamic RAM module organized as

Contextual Info: IITSU cP June 1997 Revision 1.1 data sheet SDC4UV6482C- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The S D C 4U V 6482C -(67/84/100/125)T-S is a high performance, 32-m egabtye synchronous, dynamic RAM module organized as