FI53SB Search Results
FI53SB Datasheets Context Search
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Contextual Info: ESC D • fi53SbOS 0004^01 b « S I E G PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF " ^ 2 N 2906 A 3 1 ^7 - 2 N 2907 A 2 N 2 9 0 6 A and 2 N 2 9 0 7 A are epitaxial P N P silicon planar transistors in T O 18 case 18 A 3 DIN 4 1 8 7 6 . T h e co lle cto r is electrically con n ected to th e case. T h e transistors are |
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fi53sbos103ma | |
951 a05
Abstract: 2907 2n2906 103MA a 2907 s170 2N2906A 2N2907A Q62702-F408 Q62702-S170
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fl53sbos-2n2907aq62702-f408q62702-s170+9 | |
"if amplifier" siemensContextual Info: 47E D • flE3SbOS 0034101 3 ■ SIEMENS SIEG SIEMENS AK TI E N G E S l LLSCHAF T^lA'OerOi AM Amplifier for French Sound IF Standard TDA 2148 Bipolar IC Controlled AM IF amplifier with quasi-synchronous demodulator and integral mean value control for French sound IF applications. |
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q67000-a2476p-dip-14fi53sbostda2148+2 | |
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Contextual Info: bOE D I fl235b05 QD5G42Ô 7b7 SIEMENS S IC K N S ISIEG A K 7 -iE N 6 e LLSC H AF Dual Power Operational Amplifier TCA 2465 Bipolar 1C Features • High output peak current of twice 2.5 A • Twice 2.0 A output peak current for TCA 2465 G • Large supply voltage range up to 42 V |
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fl235b05qd5g42p-dip-16q67000-a8109+4 | |
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Contextual Info: SIEMENS TEMPFET BTS115 Not for new design Replacement: BTS 115A • • • • • N channel Logic Level Enhancement mode Tem perature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Inform ation) |
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bts115o-220abc67078-a5004-a4fi53sb+3 | |
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Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and |
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p-dso-28-1 | |
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Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212 |
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fi23sbos0031bl082c212m/256+2 | |
TLE4276
Abstract: TLE4276 2 V50 TLE4276SV Q67000-A9262 tle4276g
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tle4276q67000-a9262q67000-a9263q67000-a9264+5 | |
MARKING CODE SMD JW
Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
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t-75-37-07235b0582532n-tspl-cc-68+8 | |
74LS04C
Abstract: gd5f 80515K m8ab
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fl23sfci80515k16-bit53sbd5+7 | |
siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
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crc-32fl23sb05siemens sab 825383tb siemens+8 | |
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Contextual Info: SIEMENS BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R 2=10ki2 Ordering Code Pin Configuration XCs Q62702-C2382 1=B Package II CO o Marking BCR 533 LU II |
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10ki2q62702-c2382ot-23thermal01+1 | |
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Contextual Info: • fl235b05 Q O T O b i 4 213 ■ SIEMENS CGY181 GaAsMMIC Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier •Operating voltage range: 2.7 to 6 V •Overall power added efficiency 35 % * Input matched to 50 i2, simple output match |
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fl235b05cgy181q68000-a8883 | |
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Contextual Info: •I ô23SbG5 □GC13Ü32 1 3 e ■ SIEM ENS PROFET BTS707 Smart Two Channel Highside Power Switch Features Product Summary • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection |
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23sbg56235bd5p-dsq-20-9q67060-s7010-a2 | |
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BFQ 58Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! |
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q62702-f659ot-23fi23sbdsbfq 58 | |
30N03
Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
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spp30n03p-t0220-3-1q67040-s4736-a2spb30n03+14 | |
neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
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10khz13khz2x10khz-19khz3x13khz-38khz+14 | |
hd11070
Abstract: HD-11070 hd1107r HD1105R HD-1105R HD1105 1107G 7 Segment Displays 3 Digit common anode HD-11050 HD-1105G
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235b05hd1105r/1107rhd1105y/1107yhd1105g/1107g+13 | |
V317
Abstract: s av36 67000-A5098
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67000-a5098p-dip-40ues0420sued03124+2 | |
siemens b 58 468 la intel 80
Abstract: siemens "b 58 468" la intel 80 siemens MFAB alco ff 4-4 dah PEB2055n CDS2C MOD1024 siemens b 58 468 la intel 80 0/siemens "b 58 468" la intel 80
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023sbqse35b05q67100q67100h+12 | |
HDSP7301
Abstract: HDSP-7301 7 segment led display SIEMENS Siebensegmentanzeige
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fl23sbd5p-41-33hdsp-7301235b05+4 | |
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Contextual Info: B 41 564, B 41 584 B 43 564, B 43 584 Capacitors with Screw Term inals L L Grade For professional current converter technology Voltage ratings up to 500 Vdc Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve • Poles with screw terminal connections |
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kal0272-tfl23sbd5106hz | |
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Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 620 . B 32 622 MKP stacked-film capacitors Smallest possible dimensions _ / _ b T I Construction • • • • Dielectric: polypropylene Stacked-film technology Plastic case (UL 94 V-0) |
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kmk0089-9fi53sbdsd74abb160vdo/9+5 | |
LT 450 mbrContextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W, |
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q62702-c2319q62702-c2279q62702-c2304q62702-c2305+5 | |