FG20D Search Results

FG20D

Contextual Info: HM1004-80-15, HM100480F-15 16,384-words x 1-bit Fully Decoded Random Access Memory The HM 100480-15 is ECL 100K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed systems such as scratch pads and control/buffer storages.

HM6116L

Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Contextual Info: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0

IC Package Names and Code Designations

Abstract: data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408
Contextual Info: Hitachi Semiconductor Package DATA BOOK ADE 410-001A Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional capacity and higher density and developing packages

FG2000DV

Abstract: FG600AH fg600av FG600B GT300AV FG1000AL FG600BV fg1800ch 4160VDC fg1000cx
Contextual Info: m V B Ì E X Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 42S Avenue G. Durand. BP1C7, 72003 Le Mans, France (43) 41.14.14 Powerex Gate Turn-otf Thyristors (GTOi are designed for high voltage, high current applications.

Contextual Info: HM100480-15, HM100480F-15 16,384-words x 1-bit Fully Decoded Random Access Memory The H M 10 0 4 8 0 -1 5 is ECL 100K com patible, 16,384-w ords x 1-bit, H M 1 0 0 4 80-15 read/w rite random access m em ory developed fo r high speed systems such as scratch pads and c o n tro l/b u ffer storages.