FF 030 PK Search Results

rie 1105 resistor specification

Abstract: b3b72S2
Contextual Info: M M O TO R O LA Military 10538 Bi-Quinary Counter ELECTRICALLY TESTED PER: MPG 10538 The 10538 is a four bit counter capable of divide by two, five, or ten functions. It is composed of four set-reset master-slave flip-flops. Clock inputs trigger on the positive going edge of the clock pulse.

dm 1265 r

Contextual Info: M M O T O R O L A Military 10536 Universal Hexadecimal Counter ELECTRICALLY TESTED PER: 5962-8774501 The 10536 is a high speed synchronous counterthat can count up, count down, preset, or stop count at frequencies exceeding 100 MHz. The flexibility of this de­

Contextual Info: ILD621/621GB QUAD CHANNEL ILQ621 /621GB DUAL CHANNEL Infineon technologies Multi-Channel Phototransistor Optocoupler FEATURES D im e n sio n s in in c h e s m m • Alternate Source to TLP621 -2/-4 and TLP621G B -2/-4 • Current Transfer Ratio (CTR) at Ip= 5.0 mA

RF2119

Abstract: PSSOP16 F2119
Contextual Info: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held

tai-157

Abstract: Trompeter 305 305-13 BL-982 RAYCHEM 1125
Contextual Info: RED INDICATES ORIGINAL OASH A NO / B \ -201 -202 -203 -204 -205 -206 -207 -208 -209 -210 -211 -212 -213 -214 -215 -216 -217 -210 -219 -220 -221 -222 -223 -224 -225 INCH .005 .030 .125 .187 .190 .255 .344 .439 .443 .500 .590 .600 1 .00 1.164 1.25 1.289 1.75

Contextual Info: CUSTOMER TERMINAL RoHS LEAD Pb — FREE Sn96% , Ag4% Yes Yes W U R TH E LE K T R O N IK ELECTRICAL SPECIFICATIONS @ 25°C u n le s s o th e rw ise n o te d : .4 5 0 MAX. [1 1 .4 3 ] TERM. NO.’ s FOR REF. ONLY DOT LOCATES TERM. #1 O - SEC 48V , 3 5 m A

MTA3055E

Abstract: a/MTA3055E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA3055E Fully Isolated TMOS E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.15 OHM M AX 60 VOLTS

2N6546

Abstract: 2N6547 180I 20C1 2N5875 2N5877
Contextual Info: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power

Contextual Info: 20 PART CHARACTERISTICS NUMBER OF POSITION ASSEMBLY ITEM NUMBER 02 4 3 0 2 5 -0 2 0 0 04 4 3 0 2 5 -0 4 0 0 SEE NOTE LA S T CIRCUIT TYP. MATERIAL 0.71 TYP — | SIZES 2 0.71 & 4 06 4 3 0 2 5 -0 6 0 0 08 4 3 0 2 5 -0 8 0 0 10 4 3 0 2 5 -1 0 0 0 12 4 3 0 2 5 -1 2 0 0

Burr Brown 3583AM

Abstract: 17313L ic 3583 3583
Contextual Info: 3583 Or, Call Customer Service at 1-800-548-6132 USA Only FEATURES APPLICATIONS • WIDE POWER SUPPLY VOLTAGE: ±70V to ±150V • OUTPUT CURRENT TO 75mA • SLEW RATE: 30V/(is • FET INPUT: lB = 20pA max • THERMAL SHUT-DOWN PROTECTION • HERMETIC TO-3 PACKAGE, ISOLATED

Contextual Info: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: D S 1744/D S1744P PRELIMINARY DALLAS SEMICONDUCTOR DS1744/DS1744P Y2KC Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real tim e clock, crystal, powerfail control circuit and lithium energy source A14 C 1 28 □ vcc A12 I I 2 27 □

MPC8D

Abstract: MPC16S PC16S mpc-16s 1N128
Contextual Info: BURR-BROW N MPC8D MPC16S CMOS ANALOG MULTIPLEXERS FEATURES • WILL NOT 8HORT SIGNAL SOURCES Break-bafore-naka switching • LOW POWER CONSUMPTION CMOS analog switch» ISmW at 100kHz 7AnW standby power • FAST SWITCHING SPEEDS PROVIDE HIGH THROUGHPUT RATES

015X45

Contextual Info: INTEGRATED CIRCUIT 5bE D • 40 25 75 0 G O O O ^ O 5bl ■ IGS ICS1697 Integrated Circuit Systems, Inc. Advance Information - " r - 5 0 - n CPU Frequency Generator

Contextual Info: D S 1743/D S1743P PRELIMINARY DALLAS DS1743/DS1743P s e m ic o n d u c to r N onvolatile Tim ekeeping RAM FEATURES PIN ASSIGNMENT • In te g ra te d N V S R A M , real tim e c lock, crysta l, p o w e r- 1 28 □ vcc 2 27 □ WE A7 C 3 A6 Q 4 26 □ 25 □

HVR2500

Abstract: E 02BI HVR10000 HVR1200 HVR1500 HVR1800 HVR2000 HVR3000 HVR5000 HVR6000
Contextual Info: SINO-AMERICAN SILICON 54E ^ • flSfll74L 0GD0D3b 4 ■ H IG H V O L T A G E R E C T IF IE R S 'T-^-os OPERATING AND STO R A G E TEM PERA TU R E - 6 5 ° C to + 175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Peak Surge Current @ 8.3m s Superimposed

Contextual Info: DS1543 PRELIMINARY DALLAS SEMICONDUCTOR DS1543 64K NV Timekeeping RAM FEATURES PIN ASSIGNMENT • Integrated NV SRAM, real time clock, crystal, p o w e rfail control circuit and lithium energy source RST C 1 28 □ VCC A 12 □ 2 WE A7 □ A6 c 3 27 □ 26 □

Contextual Info: RF RF2152 Preliminary MICRO DEVICES POWER A M P L IF IE R S DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3 V POWER AM PLIFIER m anufactured on an advanced G allium A rsenide H etero­ junction B ipolar Transistor HBT process, and has been designed fo r use as the final RF am plifier in dual-m ode

DIODE 1N827

Contextual Info: IN T E R N A T IO N A L •=1000370 0000007 T 40 « I S E M 41E S EM IC O N D JEDEC REGISTERED, TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES DO-7 Package MAXIMUM RATINGS MECHANICAL Operating Temperature: -65°Cto+200°C Herm etically Sealed DO-35 Storage Temperature: -65°C to +200°C

PJ 906 lv

Abstract: 131-6 bj 029 131-6 bj 028 bj 039 131-6 PJ 2166 oks 2c 131-6 BJ 031 030/TRANSISTOR BJ 131-6
Contextual Info: M M O T O R O LA Military 10595 Hex Inverter/Buffer ELECTRICALLY TESTED PER: MPG 10595 The 10595 is a Hex Buffer Inverterwhich is built using E X C L U S IV E N O R gates. There is a com m on input to these gates which when placed low or left open allows

MPC4D

Abstract: MPC8S MPC8S data
Contextual Info: BURR-BROWN CORF 03E D | 17313tS 0 0 1 3 1 m MPC4D MPC8S B U R R -B R O W N * I b b r-5/'// S | | CMOS ANALOG MULTIPLEXERS FEATURES DESCRIPTION • LOW POWER CONSUMPTION CMOS analog switches I5mW at 100kHz The M PC8S is a single-ended monolithic 8-channel analog m ultiplexer and the M PC4D is a monolithic

Contextual Info: D S1643/DS1643P DALLAS DS1643/DS1643P s e m ic o n d u c t o r N onvolstile Tim ekeeping RAM FEATURES PIN ASSIGNMENT vcc • Integrated NV SRAM, real time clock, crystal, p o w e rfail control circuit and lithium energy source WE CE2 • C lock registers are accessed identical to the static

C750PB1

Abstract: C750 C750E1 C750M1 C750N1 C750P1 C750PC1 C750S1 75180b IN122
Contextual Info: High Power sp c o Lm Silicon Controlled Rectifier C 750 1600 AAvg. Up To 1400Volts amplifying oat* ^ 1 The C750 is designed specifically for phase control applications like DC m otor control and power supplies, cycloconverters and current regulated inverters.

aks ti 79

Abstract: 4d759 AD7592D1 AD75100I AD7590DI AD7591DI AD7592DI
Contextual Info: A N A LO G DEVICES 01 CMOS Analog Switches with Data Latches AD7590DIAD 7591DIAD 7592DI FEATURES SCR Latch-Proof Ovarvoitaga-Proof: ±25V Low Ro n : M fttyp Buff«rad Switch Logic TTL, C M O S Cofnpatibt« MonoHthic D M K triM N y-lM taU d CM O S Pin CompatiMa wtth AD7510DI S«H m